RB520CS-30_11

Data Sheet Schottky barrier diode RB520CS-30 Applications Low current rectification  Dimensions (Unit : mm)  Land size figure (Unit : mm) 0.55 0.45 Features 1) Ultra Small power mold type. (VMN2) 2) Low IR 3)High reliability. VMN2 Construction Silicon epitaxial planar Structure Taping specifications (Unit : mm) Absolute maximum ratings (Ta25C) Parameter Reverse voltage (DC) Average rectiied forward current Forward current surge peak （60Hz/1cyc） Junction temperature Storage temperature Symbol VR Io IFSM Tj Tstg Limits 30 100 500 150 40 to 150 Electrical characteristics (Ta25C) Parameter Forward voltage Reverse current 0.45 Unit V mA mA C C 0.5 Symbol VF IR Min. - Typ. - Max. 0.45 0.5 Unit V A Conditions IF=10mA VR=10V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.05 - Rev.D RB520CS-30 　 Data Sheet 1000 100 10 1 0.1 0.01 0.001 0 100 200 300 400 500 600 1000000 Ta=125 C Ta=75 C 100000 Ta=125 C 100 f=1MHｚ FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(nA) Ta=75 C 10000 1000 100 Ta=-25 C 10 1 0 10 20 30 Ta=25 C Ta=-25 C Ta=25 C CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 1 0 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 5 10 15 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 20 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS 370 FORWARD VOLTAGE:V F(mV) REVERSE CURRENT:IR(nA) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 360 Ta=25 C IF=10mA n=30pcs 1000 900 800 700 600 500 400 300 200 100 0 AVE : 100.5nA Ta=25 C VR=10V n=30pcs 20 19 18 17 16 15 14 13 12 11 10 AVE : 15.94pF Ta25 C f1MHz VR0V n10pcs 350 340 330 AVE:338 : 8mV 320 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 20 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 15 8.3ms 10 AVE : 3.90A 5 1cyc 10 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 8.3ms 8.3ms 10 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm t 1cyc 5 5 0 0 1 IFSM DISRESION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0 1 10 TIME : t(ms) IFSM-t CHARACTERISTICS 100 1000 0.1 Rth(j-a) 0.02 TRANSIENT THAERMAL IMPEDANCE:Rth (°C/W) 0.08 D1/2 0.06 Sin(=180) 0.04 DC REVERSE POWER DISSIPATION:PR (W) FORWARD POWER DISSIPATION:Pf(W) 0.015 Rth(j-c) 100 Mounted on epoxy board IM=10mA 0.01 D1/2 0.005 Sin(=180) 0 DC IF=100mA time 1ms 0.02 300us 10 0.001 0 0.01 0.1 1 10 TIME : t(s) Rth-t CHARACTERISTICS 100 1000 0 0.05 0.1 0.15 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS 0.2 0 5 10 15 20 25 30 REVERSE VOLTAGE : VR(V) VR-PR CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.05 - Rev.D RB520CS-30 　 0.3 0A Io AVERAGE RECTIFIED FORWARD CURRENT:Io(A) t VR T D=t/T VR=15V Tj=125 C 0A 0V t 0.2 DC D=1/2 0.1 Sin(=180) 0 T Io VR D=t/T VR=15V Tj=125 C Data Sheet 0.3 AVERAGE RECTIFIDE FORWARD CURRENT:Io(A) 0V 0.2 DC D=1/2 0.1 Sin(=180) 0 0 25 50 75 100 AMBIENT TEMPERATURE : Ta(・C) Derating Curve"(Io-Ta) 125 0 25 50 75 100 125 CASE TEMPARATURE : Tc( C) Derating Curve"(Io-Tc) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.05 - Rev.D Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A