RB520S-30FJTE61

RB520S-30 Diodes Schottky barrier diode RB520S-30 zExternal dimensions (Units : mm) zApplications Low current rectification and high speed switching 1.6±0.1 zFeatures 1) Extremely small surface mounting type. (EMD2) 2) Low IR. (IR=0.1µA Typ.) 3) High reliability. 1.2±0.05 CATHODE MARK B 0.12±0.05 0.3±0.05 0.8±0.05 0.6±0.1 ROHM : EMD2 EIAJ : SC-79 JEDEC : SOD-523 zConstruction Silicon epitaxial planar zAbsolute maximum ratings (Ta=25°C) Symbol Limits DC reverse voltage Parameter VR 30 V Mean rectifying current IO 200 mA Peak forward surge curren∗ Unit IFSM 1 A Junction temperature Tj 125 °C Storage temperature Tstg −40~+125 °C ∗ 60Hz for 1 zElectrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Forward voltage VF − − 0.60 V IF = 200mA Reverse current IR − − 1.0 µA VR = 10V Parameter Note) ESD sensitive product handling required. Unit Conditions RB520S-30 Diodes 1m 1 REVERSE CURRENT : IR (A) 100m °C 100µ °C 25 Ta = 1m −25 12 5° C 75 °C 10m 10µ 1µ 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 FORWARD VOLTAGE : VF (V) 100 80 60 40 20 0 0 25 50 75 100 100µ 10µ 75°C 1µ 25°C 100n −25°C 10n 1n 0 10 20 30 REVERSE VOLTAGE : VR (V) Fig. 1 Forward characteristics Io CURRENT (%) FORWARD CURRENT : IF (A) Ta=125°C 125 AMBIENT TEMPERATURE : Ta (˚C) Fig 4. Derating curve (mounting on glass epoxy PCBs) Fig. 2 Reverse characteristics CAPACITANCE BETWEEN TERMINALS : CT (pF) zElectrical characteristic curves (Ta=25°C) 100 f = 1MHz 10 1 0 10 20 30 REVERSE VOLTAGE : VR (V) Fig. 3 Capacitance between terminals characteristics