RB520S-30_11

Data Sheet Schottky barrier diode RB520S-30 Applications Low current rectification Dimensions (Unit : mm) 0.8±0.05 0.12±0.05 Land size figure (Unit : mm) 0.8 0.6 3) High reliability. 1.2±0.05 1.6±0.1 Features 1) Ultra Small mold type. (EMD2) 2) Low IR. EMD2 Construction Silicon epitaxial planar 0.3±0.05 ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) Structure 0.6±0.1 Taping specifications(Unit : mm) 0.2±0.05 4.0±0.1 2.0±0.05 φ1.5±0.05 φ1.55±0.05 3.5±0.05 1.75±0.1 8.0±0.15 2.40±0.05 2.45±0.1 1.25 0.06 1.3±0.06 0 1.25 0.06 1.26±0.05 0 0.6 0 0.2 0.76±0.05 0.75±0.05 φ0.5 0.95±0.06 0.90± 0.05 0 空ポケット Empty pocket 4.0±0.1 2.0±0.05 Absolute maximum ratings(Ta=25°C) Parameter Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz 1cyc) ・ Junction temperature Storage temperature Symbol VR Io IFSM Tj Tstg Limits 30 200 1 125 -40 to +125 Unit V mA A °C °C Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Symbol VF IR Min. - Typ. - Max. 0.6 1 Unit V μA Conditions IF=200mA VR=10V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.03 - Rev.D 1.7 RB520S-30 1000 FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(nA) Data Sheet 1000000 Ta=125℃ 100000 10000 1000 100 Ta=-25℃ 10 1 Ta=75℃ Ta=125℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 f=1MHｚ 100 10 1 0.1 0.01 0.001 0 Ta=75℃ Ta=25℃ Ta=-25℃ Ta=25℃ 10 1 0 10 20 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 30 0 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 600 530 FORWARD VOLTAGE:VF(mV) 1000 Ta=25℃ IF=200mA n=30pcs 900 REVERSE CURRENT:IR(nA) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 520 800 700 600 500 400 300 200 100 0 AVE:114nA Ta=25℃ VR=10V n=30pcs 50 45 40 35 30 25 20 15 10 5 0 AVE:28.2pF Ta=25℃ f=1MHz VR=0V n=10pcs 510 500 490 AVE:507.6mV 480 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 30 PEAK SURGE FORWARD CURRENT:IFSM(A) 10 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 8.3ms 1cyc Ifsm 8.3ms 8.3ms 1cyc 10 Ifsm t 25 20 15 10 5 0 5 5 AVE:5.60A 0 1 IFSM DISRESION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 10000 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) Mounted on epoxy board IM=10mA IF=100mA 0.3 0.01 0.008 REVERSE POWER DISSIPATION:PR (W) 1000 1ms time FORWARD POWER DISSIPATION:Pf(W) D=1/2 0.2 Sin(θ＝180) DC 300us Rth(j-a) 0.006 D=1/2 0.004 0.002 Sin(θ＝180) DC 100 Rth(j-c) 0.1 10 0.001 0 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 0.1 0.2 0.3 0.4 0.5 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.03 - Rev.D RB520S-30 Data Sheet 0.5 AVERAGE RECTIFIDE FORWARD CURRENT:Io(A) 0.5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.4 0.3 DC 0A 0V t T Io VR D=t/T VR=15V Tj=125℃ 0A 0V t DC T Io VR D=t/T VR=15V Tj=125℃ 0.4 0.3 D=1/2 D=1/2 0.2 0.1 Sin(θ＝180) 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating curve (Io-Ta) 0.2 0.1 Sin(θ＝180) 0 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating curve (Io-Tc) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.03 - Rev.D Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A