RB520S-40TE61

Data Sheet Schottky Barrier Diode RB520S-40 Dimensions (Unit : mm) Applications Rectifying small power Land size figure (Unit : mm) 0.12±0.05 0.8 0.6 0.8±0.05 3)High reliability 1.6±0.1 1.2±0.05 1.7 Features 1)Ultra small mold type. (EMD2) 2)Low IR EMD2 Construction Silicon epitaxial 0.3±0.05 0.6±0.1 Structure ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) Taping specifications(Unit : mm) 0.2±0.05 φ1.5±0.05 2.0±0.05 φ1.55±0.05 1.25 0.06 1.26±0.05 0 8.0±0.15 0 0.6 1.25 0.06 1.3±0.06 0 0 2.40±0.05 2.45±0.1 3.5±0.05 1.75±0.1 4.0±0.1 0.2 φ0.5 0.95±0.06 0.90±0.05 空ポケット Empty pocket 0 Absolute maximum ratings(Ta=25°C) Parameter Symbol Reverse voltage (repetitive peak) VRM VR Reverse voltage (DC) Average rectified forward current Io IFSM Forward current surge peak Junction temperature Tj Storage temperature Tstg Electrical characteristics (Ta=25°C) Parameter Symbol VF Forward voltage VF Reverse current www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2.0±0.05 4.0±0.1 Limits Unit V V mA A °C °C 40 40 200 1 125 -40 to +125 Min. Typ. Max. Unit - - 0.39 V IF=10mA - - 0.55 V IF=100mA IR - - 1 μA VR=10V IR - - 10 μA VR=40V 1/3 0.76±0.05 0.75±0.05 Conditions 2011.03 - Rev.E Data Sheet RB520S-40 1000 1000 Ta=75℃ 10 Ta=25℃ 1 Ta=-25℃ 0.1 0.01 Ta=75℃ 10 1 Ta=25℃ 0.1 Ta=-25℃ 0.01 0.001 100 200 300 400 500 600 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 20 0 40 AVE:491.2mV 470 800 600 500 400 AVE:67.0nA 200 20 15 AVE:23.2pF 10 0 Ct DISPERSION MAP 15 8.3ms 15 AVE:5.60A 5 0 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc Ifsm 10 25 5 10 20 30 IR DISPERSION MAP 30 25 35 0 VF DISPERSION MAP Ta=25℃ f=1MHz VR=0V n=10pcs 40 100 460 Ifsm 8.3ms 8.3ms 1cyc 5 0 1 10 t 10 5 0.1 0.3 Mounted on epoxy board IM=1mA IF=200mA Ifsm 0 100 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS IFSM DISPERSION MAP 30 45 700 300 20 50 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 480 10 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS Ta=25℃ VR=10V n=30pcs 900 490 10000 30 1000 Ta=25℃ IF=100mA n=30pcs REVERSE CURRENT:IR(nA) 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.01 1ms time Rth(j-a) 300us Rth(j-c) 100 FORWARD POWER DISSIPATION:Pf(W) 0.008 1000 D=1/2 REVERSE POWER DISSIPATION:PR (W) FORWARD VOLTAGE:VF(mV) 10 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 510 500 10 1 0.0001 0 PEAK SURGE FORWARD CURRENT:IFSM(A) f=1MHｚ 100 0.001 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 100 Ta=125℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 REVERSE CURRENT:IR(μA) FORWARD CURRENT:IF(mA) Ta=125℃ 0.2 Sin(θ＝180) DC 0.1 DC 0.006 D=1/2 0.004 Sin(θ＝180) 0.002 10 0.001 0 0.01 0.1 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1000 0 0 0.1 0.2 0.3 0.4 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2/3 0.5 0 10 20 30 40 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 2011.03 - Rev.E Data Sheet RB520S-40 0.5 0.4 t DC T 0.3 VR D=t/T VR=20V Tj=125℃ D=1/2 0.2 0.1 Sin(θ＝180) 0 Io 0A 0V Io 0A 0V AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIDE FORWARD CURRENT:Io(A) 0.5 t 0.4 DC T VR D=t/T VR=20V Tj=125℃ 0.3 D=1/2 0.2 0.1 Sin(θ＝180) 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curve (Io-Ta) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 125 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curve (Io-Tc) 3/3 2011.03 - Rev.E Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A