RB520S-40_11

Data Sheet Schottky Barrier Diode RB520S-40 Applications Rectifying small power Dimensions (Unit : mm) 0.8±0.05 0.12±0.05 Land size figure (Unit : mm) 0.8 0.6 3)High reliability 1.2±0.05 1.6±0.1 Features 1)Ultra small mold type. (EMD2) 2)Low IR EMD2 Construction Silicon epitaxial 0.3±0.05 0.6±0.1 ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) Structure Taping specifications(Unit : mm) 0.2±0.05 4.0±0.1 2.0±0.05 φ1.5±0.05 φ1.55±0.05 3.5±0.05 1.75±0.1 8.0±0.15 2.40±0.05 2.45±0.1 1.25 0.06 1.3±0.06 0 1.25 0.06 1.26±0.05 0 0.6 0 0.2 0.76±0.05 0.75±0.05 φ0.5 0.95±0.06 0.90± 0.05 0 空ポケット Empty pocket 4.0±0.1 2.0±0.05 Absolute maximum ratings(Ta=25°C) Parameter Symbol Reverse voltage (repetitive peak) VRM VR Reverse voltage (DC) Average rectified forward current Io IFSM Forward current surge peak Junction temperature Tj Storage temperature Tstg Limits 40 40 200 1 125 -40 to +125 Unit V V mA A °C °C Electrical characteristics (Ta=25°C) Parameter Symbol VF Forward voltage VF Reverse current IR IR Min. - Typ. - Max. 0.39 0.55 1 10 Unit V V μA μA IF=10mA IF=100mA VR=10V VR=40V Conditions www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.03 - Rev.E 1.7 RB520S-40 Data Sheet 1000 Ta=125℃ 1000 Ta=125℃ Ta=75℃ 100 f=1MHｚ FORWARD CURRENT:IF(mA) Ta=75℃ 10 1 0.1 0.01 0.001 0 100 200 300 400 500 600 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS Ta=25℃ Ta=-25℃ 10 1 0.1 0.01 0.001 0.0001 0 10 20 30 40 Ta=25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 REVERSE CURRENT:IR(μA) 100 10 Ta=-25℃ 1 0 10 20 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 510 1000 FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(nA) 500 800 700 600 500 400 300 200 100 0 AVE:67.0nA CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ IF=100mA n=30pcs 900 Ta=25℃ VR=10V n=30pcs 50 45 40 35 30 25 20 15 10 5 0 AVE:23.2pF Ta=25℃ f=1MHz VR=0V n=10pcs 490 480 AVE:491.2mV 470 460 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 30 10 Ifsm 1cyc 8.3ms 15 Ifsm 8.3ms 8.3ms 1cyc PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 25 20 15 10 5 0 Ifsm 10 t 5 AVE:5.60A 5 0 1 IFSM DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 10000 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) Mounted on epoxy board IM=1mA IF=200mA 0.3 0.01 0.008 1000 1ms time 300us Rth(j-a) 0.2 Sin(θ＝180) DC 0.1 REVERSE POWER DISSIPATION:PR (W) FORWARD POWER DISSIPATION:Pf(W) D=1/2 DC 0.006 D=1/2 0.004 Sin(θ＝180) 0.002 100 Rth(j-c) 10 0.001 0 0.01 0.1 1 10 100 1000 0 0 0.1 0.2 0.3 0.4 0.5 0 10 20 30 40 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.03 - Rev.E RB520S-40 Data Sheet 0.5 0.5 0A 0V t DC T D=1/2 Io VR D=t/T VR=20V Tj=125℃ 0A 0V t DC T Io VR D=t/T VR=20V Tj=125℃ AVERAGE RECTIFIDE FORWARD CURRENT:Io(A) 0.4 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.4 0.3 0.3 D=1/2 0.2 0.2 0.1 Sin(θ＝180) 0.1 Sin(θ＝180) 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curve (Io-Ta) 0 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curve (Io-Tc) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.03 - Rev.E Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A