RB520SM-40

Data Sheet Schottky Barrier Diode RB520SM-40 lApplications Small current rectification lDimensions (Unit : mm) 0.8±0.05 0.12±0.05 lLand size figure (Unit : mm) 0.8 0.6 3)High reliability 1.2±0.05 1.6±0.1 lFeatures 1)Ultra small mold type. (EMD2) 2)Low IR EMD2 lConstruction Silicon epitaxial 0.3±0.05 lStructure 0.6±0.1 ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) lTaping specifications (Unit : mm) lAbsolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) Average rectified forward current Io IFSM Forward current surge peak (60Hz・1cyc) Junction temperature Tj Storage temperature Tstg Limits 45 40 200 1 150 -40 to +150 Unit V V mA A °C °C lElectrical characteristics (Ta=25°C) Parameter Symbol VF1 Forward voltage VF2 Reverse current IR1 IR2 Min. - Typ. - Max. 0.39 0.55 1 10 Unit V V μA μA IF=10mA IF=100mA VR=10V VR=40V Conditions www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.06 - Rev.A 1.7 RB520SM-40 1000 FORWARD CURRENT:IF(mA) 　 1000 Data Sheet 100 Ta=125℃ f=1MHｚ REVERSE CURRENT:IR(μA) 100 Ta=125℃ Ta=75℃ 10 1 0.1 0.01 10 Ta=75℃ Ta=25℃ Ta=25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 10 1 Ta=-25℃ 0.1 0 100 200 300 400 500 600 Ta=-25℃ 0.001 0 10 20 30 40 1 0 10 20 30 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 510 FORWARD VOLTAGE : VF(mV) Ta=25℃ IF=100mA n=30pcs 1000 900 REVERSE CURRENT:IR(nA) 800 700 600 500 400 300 200 100 AVE:67.0nA Ta=25℃ VR=10V n=30pcs 50 45 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 40 35 30 25 20 15 10 5 0 IR DISPERSION MAP Ct DISPERSION MAP AVE:23.2pF Ta=25℃ f=1MHz VR=0V n=10pcs 500 490 480 AVE:491.2mV 470 460 VF DISPERSION MAP 0 30 Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) 25 20 15 10 5 0 IFSM DISPERSION MAP 8.3ms 1cyc PEAK SURGE FORWARD CURRENT:IFSM(A) 10 Ifsm 8.3ms 8.3ms 1cyc 5 15 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm t 10 AVE:5.60A 5 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0 0.1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 1 100 10000 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) Mounted on epoxy board 0.3 0.03 0.025 D=1/2 1000 Rth(j-a) 0.2 Sin(θ＝180) REVERSE POWER DISSIPATION:PR (W) FORWARD POWER DISSIPATION:Pf(W) 0.02 DC DC 0.015 D=1/2 0.01 Sin(θ＝180) 100 Rth(j-c) 0.1 0.005 10 0.001 0 0.01 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 0.1 1000 0 0.1 0.2 0.3 0.4 0.5 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0 0 10 20 30 40 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.06 - Rev.A RB520SM-40 　 Data Sheet 0A 0V t 0.5 T AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.4 DC Io VR D=t/T VR=20V Tj=150℃ AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.5 0A 0V t T Io VR D=t/T VR=20V Tj=150℃ 0.4 DC 0.3 D=1/2 0.2 0.3 D=1/2 0.2 0.1 Sin(θ＝180) 0.1 Sin(θ＝180) 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta(℃) DERATING CURVE (Io-Ta) 0 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc(℃) DERATING CURVE (Io-Tc) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.06 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A