RB520ZS8A30

Data Sheet Schottky Barrier Diode RB520ZS8A30 lApplications Rectifying small power lDimensions (Unit : mm) lLand size figure (Unit : mm) 0.4 0.3 lFeatures 1) Ultra small mold type (HMD8) 2) Halogen Free AD HMD8 0.25 ROHM : HMD8 JEDEC : JEITA : - lStructure lConstruction Silicon epitaxial planer lTaping dimensions (Unit : mm) dot (year week factory) lAbsolute maximum ratings (Ta=25C) Parameter Symbol VR Reverse voltage (DC) Average rectified forward current (*1) Io Forward current surge peak (60Hz･1cyc.) (*2) IFSM Junction temperature Tj Storage temperature Tstg Power dissipation Pd (*1)(*2)Rating of per diode lElectrical characteristics (Ta=25C) Parameter Symbol VF Forward voltage Reverse current IR Limits 30 100 500 150 -55 to +150 400 Unit V mA mA C C mW/Total Min. - Typ. - Max. 0.46 0.3 Unit V μA IF=10mA VR=10V Conditions www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.11 - Rev.A RB520ZS8A30 　 Data Sheet 100 Ta=150°C FORWARD CURRENT:IF(mA) 1000000 Ta=150°C 100000 REVERSE CURRENT:IR(nA) Ta=125°C Ta=125°C 10000 Ta=75°C 1000 Ta=25°C 10 Ta=75°C Ta=25°C 100 1 Ta=-25°C 10 Ta=-25°C 1 0.1 0 100 200 300 400 500 600 700 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0.1 0 10 20 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 10 f=1MHｚ FORWARD VOLTAGE:VF(mV) 430 Ta=25°C IF=10mA n=30pcs 420 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 410 400 AVE:405.7mV 390 1 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 380 VF DISPERSION MAP 100 90 REVERSE CURRENT:IR(nA) 80 70 60 50 40 30 20 10 0 IR DISPERSION MAP AVE:19.93nA Ta=25°C VR=10V n=30pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) 50 45 40 35 30 25 20 15 AVE:6.3pF 10 5 0 Ct DISPERSION MAP Ta=25°C f=1MHz VR=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.11 - Rev.A RB520ZS8A30 　 Data Sheet 30 10 9 REVERSE RECOVERY TIME:trr(ns) Tj=25°C IF=0.1A IR=0.1A Irr=0.1×IR n=10pcs PEAK SURGE FORWARD CURRENT:IFSM(A) 25 IFSM 8.3ms 8 7 6 5 4 AVE:5.8ns 3 2 1 20 15 10 AVE:4.30A 5 0 IFSM DISPERSION MAP 0 trr DISPERSION MAP 10 IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 8.3ms 10 IFSM t 1cyc. 5 5 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 1000 0.15 TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) Sin(θ＝180) DC 100 FORWARD POWER DISSIPATION:Pf(W) 0.1 D=1/2 10 0.05 1 0.001 0 0.01 0.1 1 10 100 1000 0 0.05 0.1 0.15 0.2 TIME:t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.11 - Rev.A RB520ZS8A30 　 Data Sheet 0.005 30 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) 0.004 REVERSE POWER DISSIPATION:PR (W) 20 0.003 DC 0.002 D=1/2 0.001 Sin(θ＝180) 15 AVE:7.4kV 10 5 AVE:0.90kV 0 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.11 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A