RB521CS-30_09

Schottky barrier diode RB521CS-30 Applications Low current rectification Dimensions (Unit : mm) 0. 16±0. 05 Land size figure (Unit : mm) 0. 55 0. 45 0. 6±0. 05 Features 0. 9±0. 05 1. 0±0. 05 1) Ultra Small power mold type (VMN2) 2) Low VF 3) High reliability 0. 35±0. 1 VM N2 0. 37±0. 03 Structure Silicon epitaxial planer R O H M :V M N 2 dot ( year w eek f actory) + day Structure Taping dimensions (Unit : mm) 4±0. 1 2±0. 05 φ1. 55 0. 45 0. 5 0. 2±0. 05 3. 5±0. 05 1. 75±0. 1 1. 1±0. 05 φ0. 5 0. 7±0. 05 2±0. 05 4. 0±0. 1 8. 0±0. 2 0. 52 Absolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (DC) VR Average rectifierd forward current Io Forward current surge peak (60Hz/1cyc) IFSM Junction temperature Tj Storage temperature Tstg Limits 30 100 500 150 -40 to +150 Unit V mA mA °C °C Electrical characteristic (Ta=25°C) Parameter Forward vpltage Reverse current Symbol VF IR Min. - Typ. - Max. 0.35 10 Unit V µA IF=10mA VR=10V Conditions www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 1/3 2009.12 - Rev.B RB521CS-30 Electrical characteristic curves 1000 100 10 1 0.1 0.01 0.001 0 100 200 300 400 500 600 FORWARD VOLTAGE : V F(mV) VF-IF CHARACTERISTICS Ta=125° C REVERSE CURRENT:IR(uA) Ta=75° C Ta=−25° C Ta=25° C 10000 　 Data Sheet 100 Ta=125° C Ta=75° C CAPACITANCE BETWEEN TERMINALS:Ct(pF) f=1MHｚ FORWARD CURRENT:IF(mA) 1000 100 10 1 0.1 0.01 0 10 20 30 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS Ta=25° C 10 Ta=-25° C 1 0 5 10 15 20 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 300 30 Ta=25° C IF=10mA n=30pcs 25 20 15 10 AVE:2.017uA 5 0 Ta=25° C VR=10V n=30pcs 20 19 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 18 17 16 15 14 13 12 11 AVE:17.34pF Ta=25℃ f=1MHz VR=0V n=10pcs FORWARD VOLTAGE:VF(mV) 280 270 260 AVE:270.2mV REVERSE CURRENT:IR(uA) 290 250 10 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 20 Ifsm 15 8.3ms 10 1cyc PEAK SURGE FORWARD CURRENT:IFSM(A) 10 Ifsm 8.3ms 8.3ms 10 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm t PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc 5 5 5 AVE:3.90A 0 0 1 IFSM DISRESION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0 1 10 TIME1:t(ms) IFSM-t CHARACTERISTICS 100 1000 TRANSIENT ° THAERMAL IMPEDANCE:Rth ( C/W) 0.1 Rth(j-a) 0.08 FORWARD POWER DISSIPATION:Pf(W) Rth(j-c) 0.1 0.08 REVERSE POWER DISSIPATION:PR (W) D=1/2 DC Sin(θ=180) 0.06 0.06 100 Mounted on epoxy board IM=10mA IF=100mA 0.04 0.04 Sin(θ=180) D=1/2 DC 1ms tim 300us 10 0.001 0.02 0.02 0 0.01 1 10 100 TIME : t(s) Rth-t CHARACTERISTICS 0.1 1000 0 0.1 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS 0.2 0 0 10 20 30 REVERSE VOLTAGE : VR(V) VR-PR CHARACTERISTICS www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 2/3 2009.12 - Rev.B RB521CS-30 　 Data Sheet 0.3 0A AVERAGE RECTIFIDE FORWARD CURRENT:Io(A) 0V t 0.2 DC T D=1/2 0.1 Sin(θ=180) 0 0 25 50 75 100 125 AMBIENT TEMPERATURE : Ta(° C) Derating Curve"(Io-Ta) Io VR D=t/T VR=15V Tj=125° C AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.3 0A 0V t 0.2 DC D=1/2 0.1 Sin(θ=180) 0 0 25 50 75 100 125 CASE TEMPARATURE : Tc(° C) Derating Curve"(Io-Tc) T Io VR D=t/T VR=15V Tj=125° C www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 2/3 2009.12 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. 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