RB521S-30

Data Sheet Schottky Barrier Diode RB521S-30 Applications General rectification Dimensions (Unit : mm) 0.8±0.05 0.12±0.05 Land size figure (Unit : mm) 0.8 0.6 1.2±0.05 Features 1)Ultra small mold type. EMD2） （ 2)Low VF 3)High reliability 1.6±0.1 EMD2 Construction Silicon epitaxial planar 0.3±0.05 Structure 0.6±0.1 ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) Taping specifications(Unit : mm) 0.2±0.05 4.0±0.1 2.0±0.05 φ1.5±0.05 φ1.55±0.05 3.5±0.05 1.75±0.1 8.0±0.15 2.40±0.05 2.45±0.1 1.25 0.06 1.3±0.06 0 1.25 0.06 1.26±0.05 0 0.6 0 0.2 0.76±0.05 0.75±0.05 φ0.5 0.95±0.06 0.90±0.05 0 空ポケット Empty pocket 4.0±0.1 2.0±0.05 Absolute maximum ratings(Ta=25°C) Parameter Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz 1cyc) ・ Junction temperature Storage temperature Symbol VR Io IFSM Tj Tstg Limits 30 200 1 125 -40 to +125 Unit V mA A °C °C Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Symbol VF IR Min. - Typ. - Max. 0.50 30 Unit V μA Conditions IF=200mA VR=10V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.03 - Rev.F 1.7 RB521S-30 Data Sheet 1000 100000 Ta=125℃ 100 f=1MHz FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) 10 Ta=75℃ 1 0.1 0.01 0.001 0 100 200 300 400 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 500 1000 100 10 1 0.1 0.01 0 Ta=75℃ Ta=25℃ Ta=-25℃ Ta=-25℃ Ta=25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 Ta=125℃ 10000 10 10 20 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 30 1 0 5 10 15 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 20 450 50 Ta=25℃ IF=200mA n=10pcs 45 40 35 30 25 20 15 10 5 0 AVE:4.775uA Ta=25℃ VR=10V n=30pcs 20 19 Ta=25℃ f=1MHz VR=0V n=10pcs FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:VR(uA) 440 430 420 410 AVE:421.0mV 400 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 18 17 16 15 14 13 12 11 10 AVE:14.33pF VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 20 10 Ifsm 10 Ifsm 8.3ms 8.3ms 1cyc PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc 8.3ms Ifsm 15 t 10 5 5 5 AVE:5.60A 0 0 1 IFSM DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 0.2 Rth(j-a) 0.5 0.4 D=1/2 DC FORWARD POWER DISSIPATION:Pf(W) Rth(j-c) 100 Mounted on epoxy board IM=1mA IF=20mA REVERSE POWER DISSIPATIONPR (w) 0.15 0.3 0.2 0.1 0 DC Sin(θ＝180) D=1/2 0.1 Sin(θ＝180) 1ms time 0.05 300us 10 0.001 10 TIME:(s) Rth-t CHARACTERISTICS 0.1 1000 0 0 0.1 0.2 0.3 0.4 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pｆ CHARACTERISTICS 0.5 0 10 20 REVERSE VOLTAGE：VR(V) VR-PR C HARACTERISTICS 30 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.03 - Rev.F RB521S-30 Data Sheet 0.5 0A 0V DC Io 0.5 AVERAGE RECTIFIDE FORWARD CURRENT Io(A) 0.4 0.3 0.2 0.1 0 0 AVERAGE RECTIFIED FORWARD CURRENT Io(A) t T VR D=t/T VR=15V Tj=125℃ 0A 0V DC Io t T VR D=t/T VR=15V Tj=125℃ 0.4 0.3 0.2 0.1 0 D=1/2 D=1/2 Sin(θ＝180) Sin(θ＝180) 25 50 75 100 AMBIENT TEMPERATURE：Ta(℃) Derating Curveﾞ 125 0 25 50 75 100 125 CASE TEMPARATURE：Tc(℃) Derating Curve www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.03 - Rev.F Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A