RB521S-40

Data Sheet Schottky barrier diode RB521S-40 Applications Rectifying small power Dimensions (Unit : mm) 0.8±0.05 0.12±0.05  Land size figure (Unit : mm) 0.8 0.6 Features 1) Ultra small mold type. (EMD2) 2) Low VF 3) High reliability 1.2±0.05 1.6±0.1 EMD2 Structure Construction Silicon epitaxial planar 0.3±0.05 0.6±0.1 ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) Taping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ1.5±0.05 0.2±0.05 φ1.55 ±0.05 3.5±0.05 1.75±0.1 8.0±0.15 1.7 2.40±0.05 2.45±0.1 1.25 0.06 1.3±0.06 0 1.25 0.06 1.26±0.05 00 0.6 φ0.5 0.95±0.06 0.90 ±0.05 0 空ポケット Empty pocket 4.0±0.1 2.0±0.05 0.2 0.76±0.05 0.75±0.05 Absolute maximum ratings （Ta=25℃） Parameter Symbol Reverse voltage (repetitive peak) VRM Reverse voltage (DC) VR Average retified forward current Io Forward currnt surge peak(60Hz/1cyc) IFSM Junction temperature Tj Storage temperature Tstg Electrical characteristic (Ta=25C) Parameter Forward voltage Limits 45 40 200 4 150 -55 to +150 Unit V V mA A ℃ ℃ Symbol VF IR ESD Reverse current ESD break down voltage Min. 0.16 0.31 0.41 10 Typ. 0.26 0.395 0.495 3.5 13 - Max. 0.30 0.45 0.54 20 90 - Unit V μA kV Conditions IF=10mA IF=100mA IF=200mA VR=10V VR=40V C=100pF, R=1.5k forward and reverse : 1time www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.03 - Rev.B RB521S-40 Electrical characteristic curves 1000 FORWARD CURRENT : IF(mA) 　 Data Sheet CAPACITANCE BETWEEN TERMINALS : Ct(pF) 100000 REVERSE CURRENT : IR(uA) Ta=150℃ Ta=125℃ Ta=75℃ 100 f=1MHz 10000 1000 100 Ta=75℃ 100 Ta=125℃ Ta=150℃ Ta=-25℃ Ta=25℃ 10 10 1 0.1 0.01 Ta=-25℃ 10 Ta=25℃ 1 0 100 200 300 400 500 600 0 10 20 30 1 0 10 20 30 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 520 FORWARD VOLTAGE : VF(mV) REVERSE CURRENT : VR(uA) 100 Ta=25℃ IF=200mA n=30pcs 90 80 70 60 50 40 30 20 10 0 AVE:6.86uA CAPACITANCE BETWEEN TERMINALS:Ct(pF) 510 500 490 AVE:495.2mV Ta=25℃ VR=40V n=30pcs 30 29 28 27 26 25 24 23 22 21 20 AVE:27.2pF Ta=25℃ f=1MHz VR=0V n=10pcs 480 470 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 20 PEAK SURGE FORWARD CURRENT : IFSM(A) PEAK SURGE FORWARD CURRENT : IFSM(A) 1cyc 10 PEAK SURGE FORWARD CURRENT : IFSM(A) Ifsm 8.3ms 8.3ms 10 Ifsm t 15 Ifsm 8.3ms 1cyc 10 5 5 5 AVE:5.60A 0 0 1 IFSM DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0 1 10 TIME : t(ms) IFSM-t CHARACTERISTICS 100 1000 TRANSIENT THAERMAL IMPEDANCE : Rth (℃/W) Rth(j-a) 0.3 0.25 FORWARD POWER DISSIPATION:Pf(W) Rth(j-c) D=1/2 REVERSE POWER DISSIPATIONPR (w) 5 4 3 D=1/2 0.2 DC 100 Mounted on epoxy board IM=1mA IF=20mA 0.15 0.1 0.05 Sin(θ＝180) 2 Sin(θ＝180) DC 1ms time 1 0 0 0.1 0.2 0.3 0.4 0 10 20 30 40 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pｆ CHARACTERISTICS REVERSE VOLTAGE : VR(V) VR-PR CHARACTERISTICS 300us 10 0.001 0.1 10 1000 0 TIME : (s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.03 - Rev.B RB521S-40 　 Data Sheet 0.5 AVERAGE RECTIFIED FORWARD CURRENT Io(A) 0A 0V DC t T Io VR D=t/T VR=20V Tj=150℃ AVERAGE RECTIFIED FORWARD CURRENT Io(A) 0.5 0A 0V t T Io VR D=t/T VR=20V Tj=150℃ 0.4 0.3 0.2 0.1 0.4 DC 0.3 D=1/2 0.2 Sin(θ＝180) 0.1 Sin(θ＝180) 0 D=1/2 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 AMBIENT TEMPERATURE : Ta(℃) Derating Curve"(Io-Ta) CASE TEMPARATURE : Tc(℃) Derating Curve"(Io-Tc) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.03 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A