RB521SM-30

Data Sheet Schottky Barrier Diode RB521SM-30 lApplications Small current rectification lDimensions (Unit : mm) 0.8±0.05 0.12±0.05 lLand size figure (Unit : mm) 0.8 0.6 3)High reliability 1.2±0.05 1.6±0.1 lFeatures 1)Ultra small mold type. (EMD2) 2)Low VF EMD2 lConstruction Silicon epitaxial 0.3±0.05 lStructure 0.6±0.1 ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) lTaping specifications (Unit : mm) lAbsolute maximum ratings (Ta=25°C) Parameter Symbol VR Reverse voltage (DC) Average rectified forward current Io Forward current surge peak (60Hz・1cyc) IFSM Junction temperature Tj Storage temperature Tstg Limits 30 200 1 150 -40 to +150 Unit V mA A °C °C lElectrical characteristics (Ta=25°C) Parameter Symbol VF1 Forward voltage VF2 Reverse current IR Min. - Typ. - Max. 0.47 0.41 30 Unit V V μA IF=200mA IF=100mA VR=10V Conditions www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.06 - Rev.A 1.7 RB521SM-30 Data Sheet 1000 Ta=125℃ FORWARD CURRENT:IF(mA) 10000 1000 100 10 Ta=125℃ 100 REVERSE CURRENT:IR (uA) CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=75℃ Ta=25℃ 100 Ta=75℃ f=1MHz 10 Ta=-25℃ 1 10 Ta=-25℃ 1 0.1 0.01 Ta=25℃ 0.1 0 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0 10 20 30 1 0 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 450 Ta=25℃ IF=200mA n=10pcs 50 45 REVERSE CURRENT:VR(uA) 40 35 30 25 20 15 10 5 0 VF DISPERSION MAP IR DISPERSION MAP AVE:4.775uA Ta=25℃ VR=10V n=30pcs 35 34 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 33 32 31 30 29 28 27 26 25 Ct DISPERSION MAP AVE:29.58pF Ta=25℃ f=1MHz VR=0V n=10pcs FORWARD VOLTAGE:VF(mV) 440 430 420 410 AVE:421.0mV 400 20 10 1cyc Ifsm 8.3ms 8.3ms 10 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 15 Ifsm 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm t 1cyc 5 10 5 5 AVE:5.60A 0 IFSM DISPERSION MAP 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) Mounted on epoxy board Rth(j-a) 0.2 0.6 0.5 Rth(j-c) D=1/2 DC 0.1 Sin(θ＝180) REVERSE POWER DISSIPATION : PR (w) FORWARD POWER DISSIPATION:Pf(W) 0.15 DC 0.4 100 0.3 D=1/2 Sin(θ＝180) 0.2 0.05 0.1 10 0.001 0.1 10 1000 0 0 0.1 0.2 0.3 0.4 0.5 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pｆ CHARACTERISTICS 0 0 10 20 30 REVERSE VOLTAGE：VR(V) VR-PR CHARACTERISTICS TIME:(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.06 - Rev.A RB521SM-30 Data Sheet 0.5 0A 0V t Io VR AVERAGE RECTIFIED FORWARD CURRENT : Io(A) D=t/T VR=15V Tj=150℃ 0.5 0A 0V t Io VR D=t/T VR=15V Tj=150℃ AVERAGE RECTIFIED FORWARD CURRENT : Io(A) 0.4 DC T 0.4 DC T 0.3 0.3 D=1/2 0.2 D=1/2 0.2 0.1 Sin(θ＝180) 0.1 Sin(θ＝180) 0 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE：Ta(℃) DERATING CURVE (Io-Ta) 0 25 50 75 100 125 150 CASE TEMPARATURE：Tc(℃) DERATING CURVE (Io-Tc) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.06 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A