RB521SM-40

Data Sheet Schottky Barrier Diode RB521SM-40 lApplications Small current rectification lDimensions (Unit : mm) 0.8±0.05 0 .12±0.05 lLand size figure (Unit : mm) 0.8 3)High reliability 1.2±0.05 1.6±0.1 lFeatures 1)Ultra small mold type. (EMD2) 2)Low VF 0.6 EMD2 lConstruction Silicon epitaxial 0.3±0.05 0.6±0.1 lStructure ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) lTaping specifications (Unit : mm) lAbsolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) Average rectified forward current Io IFSM Forward current surge peak (60Hz・1cyc) Junction temperature Tj Storage temperature Tstg Limits 45 40 200 4 150 -55 to +150 Unit V V mA A °C °C lElectrical characteristics (Ta=25°C) Parameter Symbol Forward voltage VF Reverse current IR Min. 0.16 0.31 0.41 - Typ. 0.26 0.395 0.495 3.50 13.00 Max. 0.30 0.45 0.54 20.00 90.00 Unit V μA Conditions IF=10mA IF=100mA IF=200mA VR=10V VR=40V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.06 - Rev.A 1.7 RB521SM-40 　 Data Sheet 1000 FORWARD CURRENT:IF(mA) Ta=75℃ 100 Ta=125℃ 10000 Ta=125℃ REVERSE CURRENT:IR(uA) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1000 Ta=75℃ 100 Ta=25℃ 10 1 0.1 0.01 0 10 20 30 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 40 Ta=-25℃ 100 f=1MHz 10 Ta=-25℃ 1 10 Ta=25℃ 0.1 0 100 200 300 400 500 600 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS 1 0 10 20 30 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 520 FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:VR(uA) Ta=25℃ IF=200mA n=30pcs 100 90 80 70 60 50 40 30 20 10 AVE:6.86uA Ta=25℃ VR=40V n=30pcs 30 29 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 28 27 26 25 24 23 22 21 20 AVE:27.2pF Ta=25℃ f=1MHz VR=0V n=10pcs 510 500 490 AVE:495.2mV 480 470 0 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 20 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc 10 Ifsm 8.3ms 8.3ms 1cyc 5 PEAK SURGE FORWARD CURRENT:IFSM(A) 10 Ifsm t Ifsm 15 8.3ms 10 5 5 AVE:5.60A 0 0 1 IFSM DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) Mounted on epoxy board Rth(j-a) 0.3 0.25 Rth(j-c) FORWARD POWER DISSIPATION:Pf(W) D=1/2 0.2 0.15 0.1 0.05 DC Sin(θ＝180) REVERSE POWER DISSIPATION : PR (w) 0.5 0.4 DC 0.3 D=1/2 0.2 Sin(θ＝180) 0.1 100 10 0.001 0.1 10 1000 0 0 0.1 0.2 0.3 0.4 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pｆ CHARACTERISTICS 0 0 10 20 30 40 REVERSE VOLTAGE：VR(V) VR-PR CHARACTERISTICS TIME:(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.06 - Rev.A RB521SM-40 　 Data Sheet 0A 0.5 0V t AVERAGE RECTIFIED FORWARD CURRENT : Io(A) 0.4 DC T Io VR AVERAGE RECTIFIED FORWARD CURRENT : Io(A) D=t/T VR=20V Tj=150℃ 0.5 0A 0V t DC T Io VR D=t/T VR=20V Tj=150℃ 0.4 0.3 Sin(θ＝180) 0.2 D=1/2 0.3 D=1/2 0.2 0.1 0.1 Sin(θ＝180) 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE：Ta(℃) DERATING CURVE (Io-Ta) 0 0 25 50 75 100 125 150 CASE TEMPARATURE：Tc(℃) DERATING CURVE (Io-Tc) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.06 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A