RB530S-30_11

Data Sheet Schottky barrier Diode RB530S-30 Applications General rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 0.8 Features 1)Ultra small mold type. (EMD2) 2)Low IR 3)High reliability 0.6 EMD2 Construction Silicon epitaxial planer Structure Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.5±0.05 0.2±0.05 φ1.55±0.05 3.5±0.05 1.75±0.1 8.0±0.15 2.40 ±0.05 2.45±0.1 1.25 0.06 1.26±0.05 00 1.25  0.06 1.3±0.06 0 0.6 φ0.5 0 .95±0.06 0.90 ±0.05 0 空ポケット Empty pocket 4.0±0.1 2.0±0.05 Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (DC) VR Average rectified forward current Io Forward current surge peak (60Hz/1cyc) IFSM Junction temperature Tj Storage temperature Tstg Electical characteristics (Ta=25C) Parameter Forward voltage Reverse current Limits 30 100 500 125 -40 to +125 Unit V mA mA C C Symbol VF IR Min. - Typ. - Max. 0.45 0.5 Unit V μA Conditions IF=10mA VR=10V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.03 - Rev.B 1.7 0.2 0.76±0.05 0.75±0.05 RB530S-30 　 Data Sheet Electical characteristics curves 1000 1000000 100 FORWARD CURRENT : I F(mA) REVERSE CURRENT : IR(nA) 10 1 0.1 0.01 0.001 0 Ta=75 C Ta=-25 C Ta=25 C 10000 1000 100 10 1 0.1 Ta=75 C Ta=25 C CAPACITANCE BETWEEN TERMINALS : Ct(pF) 100 Ta=125 C Ta=125 100000 f=1MHｚ 10 Ta=-25 C 100 200 300 400 500 600 0 10 20 30 1 0 5 10 15 20 FORWARD VOLTAGE : V F(mV) VF-IF CHARACTERISTICS REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 370 FORWARD VOLTAGE : V F(mV) REVERSE CURRENT : IR(nA) 360 800 700 600 500 400 300 200 100 0 AVE : 108.3nA CAPACITANCE BETWEEN TERMINALS : Ct(pF) Ta=25 C VF=10mA n=30pcs 1000 900 20 Ta=25 C VR=10V n=30pcs 19 18 17 16 15 14 13 12 11 10 AVE : 16.28pF 350 Ta=25 C f=1MHz VR=0V n=10pcs 340 AVE : 347.5mV 330 320 VF DISPERSION MAP 20 1cyc 10 IR DISPERSION MAP 10 Ct DISPERSION MAP PEAK SURGE FORWARD CURRENT : I FSM(A) PEAK SURGE FORWARD CURRENT : I FSM(A) 15 Ifsm Ifsm 8.3ms 8.3ms PEAK SURGE FORWARD CURRENT : I FSM(A) Ifsm t 8.3ms 10 AVE : 4.20A 5 1cyc 5 5 0 0 1 10 100 0 1 10 100 IFSM DISRESION MAP NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS TIME : t(ms) IFSM-t CHARACTERISTICS 1000 0.1 0.02 TRANSIENT THAERMAL IMPEDANCE : Rth ( C/W) Rth(j-a) 0.08 DC D=1/2 REVERSE POWER DISSIPATION : PR (W) 0.015 100 FORWARD POWER DISSIPATION : Pf(W) Rth(j-c) 0.06 Sin(=180) 0.04 0.01 10 0.02 DC 0.005 Sin(=180) 1 0.001 0 0.01 0.1 1 10 100 1000 0 0.05 0.1 0.15 0.2 0 0 5 10 15 D=1/2 20 25 30 TIME : t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS REVERSE VOLTAGE : VR(V) VR-PR CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.03 - Rev.B RB530S-30 　 Data Sheet 0.3 0.3 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) AVERAGE RECTIFIED FORWARD CURRENT : Io(A) 0A 0V 0.2 Io t T VR D=t/T VR=15V Tj=125 C 0A 0V 0.2 Io t T D=t/T VR=15V Tj=125 C VR DC D=1/2 DC D=1/2 0.1 0.1 Sin(=180) 0 0 25 50 75 100 125 Sin(=180) 0 0 25 50 75 100 125 AMBIENT TEMPERATURE : Ta( C) Derating Curve"(Io-Ta) CASE TEMPARATURE : Tc( C) Derating Curve"(Io-Tc) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.03 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A