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RB530VM-30

RB530VM-30

  • 厂商:

    ROHM(罗姆)

  • 封装:

  • 描述:

    RB530VM-30 - Schottky Barrier Diode - Rohm

  • 数据手册
  • 价格&库存
RB530VM-30 数据手册
Data Sheet Schottky Barrier Diode RB530VM-30 Applications General rectification Dimensions (Unit : mm) 1.25±0.1 0.1±0.1     0.05 Land size figure (Unit : mm) 0.8MIN. 0.9MIN. 1.7±0.1 2.5±0.2 Features 1)Ultra small mold type. (UMD2) 2)High reliability UMD2 Construction Silicon epitaxial planer 0 .3±0.05 0.7±0.2     0.1 Structure ROHM : UMD2 JEDEC : SOD-323 JEITA : SC-90/A dot (year week factory) Taping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 0.3±0.1 3.5±0.05 1.75±0.1 8.0±0.2 1.40±0.1 4.0±0.1 φ1.05 1.0±0.1 Absolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) Average rectified forward current Io IFSM Forward current surge peak (60Hz・1cyc) Junction temperature Tj Storage temperature Tstg Limits 30 30 100 500 150 - 40 to +150 Unit V V mA mA °C °C Electrical characteristics (Ta=25°C) Parameter Symbol VF Forward voltage Reverse current IR Min. - Typ. - Max. 0.45 0.5 Unit V μA IF=10mA VR=10V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2.75 Conditions 1/4 2011.09 - Rev.A 2.8±0.1 2.1 RB530VM-30   Data Sheet 100 100000 Ta=125°C Ta=125°C 10000 REVERSE CURRENT:IR(nA) Ta=75°C 1000 Ta=25°C 100 Ta=−25°C 10 FORWARD CURRENT:IF(mA) 10 Ta=75°C 1 Ta=25°C 0.1 Ta=−25°C 0.01 0 100 200 300 400 500 600 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 1 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS 100 f=1MHz 370 Ta=25°C VF=10mA n=30pcs FORWARD VOLTAGE:VF(mV) 360 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 350 10 340 AVE:349.1mV 330 1 0 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 320 VF DISPERSION MAP 400 Ta=25°C VR=10V n=30pcs 300 20 Ta=25°C f=1MHz VR=0V n=10pcs REVERSE CURRENT:IR(nA) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 19 18 200 17 AVE:16.35pF 100 AVE:129.0nA 16 0 IR DISPERSION MAP 15 Ct DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.09 - Rev.A RB530VM-30   Data Sheet 15 IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 10 1cyc PEAK SURGE FORWARD CURRENT:IFSM(A) 10 IFSM 8.3ms 8.3ms 1cyc 5 AVE:430A 5 0 IFSM DISPERSION MAP 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 10 1000 Mounted on epoxy board PEAK SURGE FORWARD CURRENT:IFSM(A) IFSM t TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) Rth(j-a) Rth(j-c) 100 5 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 10 0.001 0.01 0.1 1 10 100 1000 TIME:t(s) Rth-t CHARACTERISTICS 0.1 0.01 0.08 FORWARD POWER DISSIPATION:Pf(W) D=1/2 0.06 DC REVERSE POWER DISSIPATION:PR (W) 0.005 DC 0.04 Sin(θ=180) D=1/2 0.02 0 0 0.05 0.1 0.15 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS 0.2 Sin(θ=180) 0 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.09 - Rev.A RB530VM-30   Data Sheet 0.3 0A 0V AVERAGE RECTIFIED FORWARD CURRENT:Io(A) t 0.2 DC T Io VR AVERAGE RECTIFIED FORWARD CURRENT:Io(A) D=t/T VR=15V Tj=150°C 0.3 0A 0V t 0.2 DC T Io VR D=t/T VR=15V Tj=150°C D=1/2 0.1 Sin(θ=180) D=1/2 0.1 Sin(θ=180) 0 0 25 50 75 100 125 150 0 0 25 50 75 100 125 150 CASE TEMPERATURE:Tc(°C) DERATING CURVE (Io-Tc) AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE (Io-Ta) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.09 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A
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