Data Sheet
Schottky Barrier Diode
RB530VM-30
Applications General rectification Dimensions (Unit : mm)
1.25±0.1 0.1±0.1 0.05
Land size figure (Unit : mm)
0.8MIN.
0.9MIN.
1.7±0.1
2.5±0.2
Features 1)Ultra small mold type. (UMD2) 2)High reliability
UMD2
Construction Silicon epitaxial planer
0 .3±0.05
0.7±0.2 0.1
Structure
ROHM : UMD2 JEDEC : SOD-323 JEITA : SC-90/A dot (year week factory)
Taping dimensions (Unit : mm)
4.0±0.1 2.0±0.05 φ1.55±0.05 0.3±0.1
3.5±0.05
1.75±0.1
8.0±0.2
1.40±0.1
4.0±0.1
φ1.05 1.0±0.1
Absolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) Average rectified forward current Io IFSM Forward current surge peak (60Hz・1cyc) Junction temperature Tj Storage temperature Tstg
Limits 30 30 100 500 150 - 40 to +150
Unit V V mA mA °C °C
Electrical characteristics (Ta=25°C) Parameter Symbol VF Forward voltage Reverse current IR
Min. -
Typ. -
Max. 0.45 0.5
Unit V μA IF=10mA VR=10V
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved.
2.75
Conditions
1/4
2011.09 - Rev.A
2.8±0.1
2.1
RB530VM-30
Data Sheet
100
100000 Ta=125°C Ta=125°C 10000 REVERSE CURRENT:IR(nA) Ta=75°C 1000 Ta=25°C 100 Ta=−25°C 10
FORWARD CURRENT:IF(mA)
10
Ta=75°C 1 Ta=25°C
0.1 Ta=−25°C 0.01 0 100 200 300 400 500 600 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS
1 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS
100 f=1MHz
370 Ta=25°C VF=10mA n=30pcs
FORWARD VOLTAGE:VF(mV)
360
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
350
10
340
AVE:349.1mV
330
1 0 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS
320 VF DISPERSION MAP
400 Ta=25°C VR=10V n=30pcs 300
20 Ta=25°C f=1MHz VR=0V n=10pcs
REVERSE CURRENT:IR(nA)
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
19
18
200
17
AVE:16.35pF
100 AVE:129.0nA 16
0 IR DISPERSION MAP
15 Ct DISPERSION MAP
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved.
2/4
2011.09 - Rev.A
RB530VM-30
Data Sheet
15 IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 10 1cyc PEAK SURGE FORWARD CURRENT:IFSM(A)
10
IFSM 8.3ms 8.3ms
1cyc
5
AVE:430A 5
0 IFSM DISPERSION MAP
0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100
10
1000 Mounted on epoxy board
PEAK SURGE FORWARD CURRENT:IFSM(A)
IFSM t
TRANSIENT THERMAL IMPEDANCE:Rth (°C/W)
Rth(j-a)
Rth(j-c) 100
5
0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100
10 0.001
0.01
0.1
1
10
100
1000
TIME:t(s) Rth-t CHARACTERISTICS
0.1
0.01
0.08 FORWARD POWER DISSIPATION:Pf(W) D=1/2 0.06
DC REVERSE POWER DISSIPATION:PR (W)
0.005
DC
0.04
Sin(θ=180)
D=1/2
0.02
0 0 0.05 0.1 0.15 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS 0.2
Sin(θ=180) 0 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved.
3/4
2011.09 - Rev.A
RB530VM-30
Data Sheet
0.3 0A 0V AVERAGE RECTIFIED FORWARD CURRENT:Io(A) t 0.2 DC T Io VR AVERAGE RECTIFIED FORWARD CURRENT:Io(A) D=t/T VR=15V Tj=150°C
0.3 0A 0V t 0.2 DC T Io VR D=t/T VR=15V Tj=150°C
D=1/2 0.1 Sin(θ=180)
D=1/2 0.1 Sin(θ=180)
0 0 25 50 75 100 125 150
0 0 25 50 75 100 125 150 CASE TEMPERATURE:Tc(°C) DERATING CURVE (Io-Tc)
AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE (Io-Ta)
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved.
4/4
2011.09 - Rev.A
Notice
Notes
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ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved.
R1120A
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