RB531S-30_11

Data Sheet Schottky Barrier Diode RB531S-30 Applications General rectification Dimensions(Unit : mm) 0.8±0.05 0.12±0.05 Land size figure(Unit : mm) 0.8 0.6 3)High reliability 1.2±0.05 1.6±0.1 Features 1)Ultra small mold type.(EMD2) 2)Low VF N 0.3±0.05 EMD2 Construction Silicon epitaxial planer  Structure 0.6±0.1 ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) Taping specifications(Unit : mm) 4.0±0.1 2.0±0.05 φ1.5±0.05 0.2±0.05 φ1.55±0.05 3.5±0.05 1.75±0.1 8.0±0.15 2.40±0.05 2.45±0.1 1.25 0.06 1.26±0.05 00 1.25 0.06 1.3±0.06 0 0.6 φ0.5 0 .95±0.06 0.90±0.05 0 空ポケット Empty pocket 4.0±0.1 2.0±0.05 0.2 0.76±0.05 0.75±0.05 Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage(DC) Average rectified forward current Forward current surge peak(60Hz/1cyc) Limits 30 100 500 125 -40to+125 Junction temperature Storage temperature Electical voltage (Ta=25C) Parameter Forward voltage Reverse current VR Io IFSM Tj Tstg Unit V mA mA C C Symbol VF IR Min. - Typ. - Max. 0.35 10 Unit V μA Conditions IF=10mA VR=10V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.03 - Rev.B 1.7 RB531S-30 　 Data Sheet Electrical characteristics curves 1000 FORWARD CURRENT : IF(mA) 100 10 1 0.1 0.01 0.001 0 100 200 300 400 500 600 FORWARD VOLTAGE : V F(mV) VF-IF CHARACTERISTICS Ta=125 C 10000 REVERSE CURRENT : IR(A) 1000 Ta=75 C 100 10 1 0.1 0.01 0 10 20 30 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS Ta=25 C CAPACITANCE BETWEEN TERMINALS : Ct(pF) Ta=125 C 100 f=1MHｚ Ta=75 C Ta=-25 C Ta=25 C 10 Ta=-25 C 1 0 5 10 15 20 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 300 FORWARD VOLTAGE : VF(mV) Ta=25 C VF=10mA n=30pcs 30 25 20 15 10 5 0 VF DISPERSION MAP AVE : 2.037 A Ta=25 C VR=10V n=30pcs CAPACITANCE BETWEEN TERMINALS : Ct(pF) 20 19 18 17 16 15 14 13 12 11 10 Ct DISPERSION MAP Ta=25 C f=1MHz VR=0V n=10pcs 290 280 REVERSE CURRENT : IR(A) AVE : 17.34pF 270 260 AVE : 270.2mV 250 IR DISPERSION MAP 20 PEAK SURGE FORWARD CURRENT : IFSM(A) PEAK SURGE FORWARD CURRENT : IFSM(A) Ifsm 15 8.3ms 10 AVE : 3.90A 5 1cyc 10 Ifsm 8.3ms 8.3ms 10 PEAK SURGE FORWARD CURRENT : IFSM(A) Ifsm t 1cyc 5 5 0 0 1 IFSM DISRESION MAP 10 NUMBER OF CYCLES IFSM -CYCLE CHARACTERISTICS 100 0 1 10 TIME : t(ms) IFSM-t CHARACTERISTICS 100 1000 TRANSIENT  THAERMAL IMPEDANCE : Rth ( C/W) Rth(j-a) 0.1 0.1 FORWARD POWER DISSIPATION : Pf(W) D=1/2 0.06 Sin(=180) 0.04 DC REVERSE POWER DISSIPATION : PR (W) 0.08 0.08 Rth(j-c) 100 0.06 D=1/2 DC Sin(=180) Mounted on epoxy board IM=10mA IF=100mA 0.04 0.02 1ms 0.02 time 0 100 1000 0 0.1 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS 0.2 0 0 10 20 30 300s 10 0.001 0.01 0.1 1 10 TIME : t(s) Rth-t CHARACTERISTICS REVERSE VOLTAGE : VR(V) VR-PR CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.03 - Rev.B RB531S-30 　 Data Sheet 0.3 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) AVERAGE RECTIFIED FORWARD CURRENT : Io(A) 0A 0V t 0.2 DC D=1/2 0.1 T Io VR D=t/T VR=15V Tj=125 C 0.3 0A 0V t 0.2 DC T D=1/2 0.1 Io VR D=t/T VR=15V Tj=125 C Sin(=180) 0 0 25 50 75 100 125 Sin(=180) 0 0 25 50 75 100 125 CASE TEMPARATURE : Tc(  C) Derating Curve"(Io-Tc) AMBIENT TEMPERATURE : Ta( C) Derating Curve"(Io-Ta) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.03 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A