RB541XN

Data Sheet Schottky Barrier Diode RB541XN Applications Rectify small power Dimensions (Unit : mm) Land size figure (Unit : mm) 0.65 0.25± 0.1 0.05 0.65 2.0±0.2 各リードとも Each lead has same dimension 同寸法 (5) (4) 0.15±0.05 1.25±0.1 3)High reliability (1) 0.65 (2) 0.65 (3) 2.1±0.1 Features 1)Small mold type. (UMD6) 2)Low VF 0.9 0～0.1 0.35 UMD6 Construction Silicon epitaxial planer 1.3±0.1 0.7 0.9±0.1 0.1Min Structure ROHM : UMD6 JEDEC : SOT-363 JEITA : SC-88 dot (year week factory) Taping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ1.5±0.1 　　　　　 0 0.3±0.1 3.5±0.05 1.75±0.1 2.45±0.1 2.4±0.1 5.5±0.2 8.0±0.2 2.2±0.1 4.0±0.1 φ1.1±0.1 0～0.5 2.4±0.1 1.15±0.1 Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (DC) Average rectified forward voltage (*1) Forward voltage surge peak (60Hz・1cyc) (*2) Limits 30 100 500 125 40 to 125 Junction temperature Storage temperature (*1) Rating of per diode:1/3Io (*2) Rating of per diode VR Io IFSM Tj Tstg Unit V mA mA C C Electrical characteristics (Ta=25C) Parameter Symbol Forward voltage Reverse current *Rating of per diode VF IR Min. - Typ. - Max. 0.35 10 Unit V μA Conditions IF=10mA VR=10V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.11 - Rev.A 1.6 (6) RB541XN 　 Data Sheet 1000 Ta=125°C 100 FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(mA) Ta=75°C 10000 Ta=125°C 1000 Ta=75°C 100 Ta=25°C 10 10 1 Ta=25°C 0.1 1 Ta=-25°C 0.01 Ta=-25°C 0.1 0.001 0 100 200 300 400 500 600 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0.01 0 10 20 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 100 f=1MHz FORWARD VOLTAGE:VF(mV) 300 Ta=25°C IF=10mA n=30pcs 290 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 280 10 270 AVE:270.2mV 260 1 0 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 250 VF DISPERSION MAP 30 Ta=25°C VR=10V n=30pcs 20 19 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 18 17 16 15 14 13 12 11 AVE:17.34pF Ta=25°C f=1MHz VR=0V n=10pcs 25 REVERSE CURRENT:VR(mA) 20 15 10 AVE:2.037mA 5 0 IR DISPERSION MAP 10 Ct DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.11 - Rev.A RB541XN 　 Data Sheet 20 1cyc REVERSE RECOVERY TIME:trr(ns) 14 12 AVE:13.0ns 10 8 6 4 2 0 IFSM DISPERSION MAP trr DISPERSION MAP Ta=25°C IF=IR=100mA Irr=0.1IR IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) 15 8.3ms 10 AVE:3.90A 5 0 10 IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) 10 IFSM t 1cyc 5 5 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 1000 On glass-epoxy substrate Rth(j-a) TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) 0.1 0.08 100 Rth(j-c) FORWARD POWER DISSIPATION:Pf(W) D=1/2 0.06 Sin(θ＝180) D.C. 0.04 10 0.02 1 0.001 0 0.01 1 10 TIME:(s) Rth-t CHARACTERISTICS 0.1 100 1000 0 0.05 0.1 0.15 0.2 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pｆ CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.11 - Rev.A RB541XN 　 Data Sheet 0.06 0.2 0.05 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) D.C. REVERSE POWER DISSIPATION:PR (w) 0.04 0.15 D.C. D=1/2 0.1 Sin(θ＝180) 0.03 D=1/2 0.02 Sin(θ＝180) 0.05 0.01 0 0 10 20 30 REVERSE VOLTAGE：VR(V) VR-PR CHARACTERISTICS 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE(Io-Ta) 0.2 30 D.C. 0.15 D=1/2 0.1 Sin(θ＝180) ELECTROSTATIC DISCHARGE TEST ESD(KV) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 25 20 15 AVE:9.50kV 10 AVE:2.80kV 5 0.05 0 0 25 50 75 100 125 CASE TEMPERATURE:Tc(°C) DERATING CURVE(Io-Tc) 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.11 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A