RB550EAFHTR

RB550EAFH Schottky Barrier Diode (AEC-Q101 qualified) Data sheet 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 ● Outline VR 30 V Io 0.7 A IFSM 12 A 　 　 　 　 　 　 　 　 　 　 　 　　　 ● Features ● Inner Circuit High reliability Small mold type Low V F ● Application ● Packaging Specifications Packing Embossed Tape Reel Size(mm) 180 Taping Width(mm) 8 Basic Ordering Unit(pcs) 3000 Taping Code TR Marking D2Q General rectification ● Structure Silicon epitaxial planar ● Absolute Maximum Ratings (Ta=25ºC unless otherwise specified) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage Reverse voltage V RM VR Duty≦0.5 Reverse direct voltage 30 30 V V Average rectified forward current Io 0.7 A 12 A 150 -40 ～ 150 ℃ Peak forward surge current IFSM Glass epoxy mounted、 60Hz half sin waveform、 resistive load、per dIode t=100μsec、Non-repetitive、one cycle、 per diode、Ta=25℃ Junction temperature(1) Storage temperature Tj Tstg - ℃ Note(1) To avoid occurrence of thermal runaway ， actual board is to be designed to fulfill dPd/dTj