Data Sheet
Schottky Barrier Diode
RB550SS-30
Applications Small current rectification Dimensions (Unit : mm) Land size figure (Unit : mm)
0.8
0.5
0.4±0.05
Features 1)Small mold type (KMD2) 2)High reliability 3)Low IR
0.8±0.05
1.6±0.05
1 .2±0.05
0~0.03
KMD2
Structure
0.6±0.03
0.7±0.05
Construction Silicon epitaxial planer
ROHM : KMD2 JEDEC :JEITA : dot (year week factory)
Taping dimensions (Unit : mm)
Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (repetitive peak) Reverse voltage (DC)
Average rectified forward current (*1)
Forward current surge peak (60Hz ・1cyc.)
Limits 30 30 0.5 5 150 40 to 150
Unit V V A A C C
VRM VR Io IFSM
Tj Tstg (*1) On the Glass epoxy board , 180°Half Sine wave Electrical characteristics (Ta=25C) Parameter Symbol Forward Voltage Reverse Current VF IR
Junction temperature Storage temperature
Min. -
Typ. 0.53 1.00
Max. 0.59 8.00
Unit V μA
Conditions IF=0.5A VR=15V
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.12 - Rev.A
1.2
RB550SS-30
Data Sheet
1
10000 Tj=150°C 1000
FORWARD CURRENT:IF(A)
Tj=125°C 0.1 Tj=150°C Tj=25°C
REVERSE CURRENT:IR(mA)
100
Tj=125°C
10 Tj=75°C 1
Tj=75°C 0.01 0 200 400 600 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 0.1 0 5 10 15 20
Tj=25°C 25 30
REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS
100 f=1MHz
600 580 FORWARD VOLTAGE:VF(mV) IF=0.5A Tj=25°C
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
560 540 520 500 480 460 AVE:503.7mV
10
1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS
440 VF DISPERSION MAP
10000 VR=15V Tj=25°C REVERSE CURRENT:IR(nA) CAPACITANCE BETWEEN TERMINALS:Ct(pF)
80 f=1MHz VR=0V Tj=25°C 70 AVE:59.6pF 60
1000
AVE:561.5nA
50
100 IR DISPERSION MAP
40 Ct DISPERSION MAP
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved.
2/4
2011.12 - Rev.A
RB550SS-30
Data Sheet
30 IFSM 8.3ms 20 1cyc REVERSE RECOVERY TIME:trr(ns)
20 IF=0.1A IR=0.1A Irr=0.10×IR 15 Tj=25°C
25 PEAK SURGE FORWARD CURRENT:IFSM(A)
15
10 AVE:5.4ns
10 AVE:13.8A 5
5
0 IFSM DISPERSION MAP
0 trr DISPERSION MAP
100 IFSM 8.3ms 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A)
100
IFSM
time
1cyc.
10
10
1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100
1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100
1000
0.5 D.C.
TRANSIENT THERMAL IMPEDANCE:Rth (°C/W)
Rth(j-a) REVERSE POWER DISSIPATION:PR (W)
D=1/2 0.4 Sin(θ=180) 0.3
100 Rth(j-c)
0.2
10
0.1
1 0.001
0 0.01 0.1 1 10 100 1000 0 0.2 0.4 0.6 0.8 1 TIME:t(s) Rth-t CHARACTERISTICS REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved.
3/4
2011.12 - Rev.A
RB550SS-30
Data Sheet
1 0.9 D.C. AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 50 Sin(θ=180) D=1/2
0A 0V t T
Io VR D=t/T VR=15V Tj=150°C
1 0.9 D.C. AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 Sin(θ=180) D=1/2
0A 0V t T
Io VR D=t/T VR=15V Tj=150°C
100
150
0
50
100
150
AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE (Io-Ta)
CASE TEMPERATURE:Tc(°C) DERATING CURVE (Io-Tc)
30
25 ELECTROSTATIC DISCHARGE TEST ESD(KV) AVE:17.7kV 20
15
10
5
AVE:1.59kV
0 C=200pF R=0Ω C=100pF R=1.5kΩ
ESD DISPERSION MAP
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved.
4/4
2011.12 - Rev.A
Notice
Notes
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http://www.rohm.com/contact/
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved.
R1120A
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