RB550SS-30

RB550SS-30

  • 厂商:

    ROHM(罗姆)

  • 封装:

  • 描述:

    RB550SS-30 - Schottky Barrier Diode - Rohm

  • 数据手册
  • 价格&库存
RB550SS-30 数据手册
Data Sheet Schottky Barrier Diode RB550SS-30 Applications Small current rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 0.8 0.5 0.4±0.05 Features 1)Small mold type (KMD2) 2)High reliability 3)Low IR 0.8±0.05 1.6±0.05 1 .2±0.05 0~0.03 KMD2 Structure 0.6±0.03 0.7±0.05 Construction Silicon epitaxial planer ROHM : KMD2 JEDEC :JEITA : dot (year week factory) Taping dimensions (Unit : mm) Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz ・1cyc.) Limits 30 30 0.5 5 150 40 to 150 Unit V V A A C C VRM VR Io IFSM Tj Tstg (*1) On the Glass epoxy board , 180°Half Sine wave Electrical characteristics (Ta=25C) Parameter Symbol Forward Voltage Reverse Current VF IR Junction temperature Storage temperature Min. - Typ. 0.53 1.00 Max. 0.59 8.00 Unit V μA Conditions IF=0.5A VR=15V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.12 - Rev.A 1.2 RB550SS-30   Data Sheet 1 10000 Tj=150°C 1000 FORWARD CURRENT:IF(A) Tj=125°C 0.1 Tj=150°C Tj=25°C REVERSE CURRENT:IR(mA) 100 Tj=125°C 10 Tj=75°C 1 Tj=75°C 0.01 0 200 400 600 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 0.1 0 5 10 15 20 Tj=25°C 25 30 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS 100 f=1MHz 600 580 FORWARD VOLTAGE:VF(mV) IF=0.5A Tj=25°C CAPACITANCE BETWEEN TERMINALS:Ct(pF) 560 540 520 500 480 460 AVE:503.7mV 10 1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 440 VF DISPERSION MAP 10000 VR=15V Tj=25°C REVERSE CURRENT:IR(nA) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 80 f=1MHz VR=0V Tj=25°C 70 AVE:59.6pF 60 1000 AVE:561.5nA 50 100 IR DISPERSION MAP 40 Ct DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.12 - Rev.A RB550SS-30   Data Sheet 30 IFSM 8.3ms 20 1cyc REVERSE RECOVERY TIME:trr(ns) 20 IF=0.1A IR=0.1A Irr=0.10×IR 15 Tj=25°C 25 PEAK SURGE FORWARD CURRENT:IFSM(A) 15 10 AVE:5.4ns 10 AVE:13.8A 5 5 0 IFSM DISPERSION MAP 0 trr DISPERSION MAP 100 IFSM 8.3ms 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 100 IFSM time 1cyc. 10 10 1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 1000 0.5 D.C. TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) Rth(j-a) REVERSE POWER DISSIPATION:PR (W) D=1/2 0.4 Sin(θ=180) 0.3 100 Rth(j-c) 0.2 10 0.1 1 0.001 0 0.01 0.1 1 10 100 1000 0 0.2 0.4 0.6 0.8 1 TIME:t(s) Rth-t CHARACTERISTICS REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.12 - Rev.A RB550SS-30   Data Sheet 1 0.9 D.C. AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 50 Sin(θ=180) D=1/2 0A 0V t T Io VR D=t/T VR=15V Tj=150°C 1 0.9 D.C. AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 Sin(θ=180) D=1/2 0A 0V t T Io VR D=t/T VR=15V Tj=150°C 100 150 0 50 100 150 AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE (Io-Ta) CASE TEMPERATURE:Tc(°C) DERATING CURVE (Io-Tc) 30 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) AVE:17.7kV 20 15 10 5 AVE:1.59kV 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.12 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A
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