RB550VA-30_11

Data Sheet Schottky barrier Diode RB550VA-30  Applications General rectification  Dimensions (Unit : mm) 0.17±0.1 　　 0.05 1.3±0.05  Land size figure (Unit : mm) 1.1 1.9±0.1 3)High reliability 2.5±0.2 TUMD2  Construction Silicon epitaxial planar 0.8±0.05  Structure ROHM : TUMD2 　　　 0.1 dot (year week factory) + day 0.6±0.2  Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 3.5±0.05 1.75±0.1 φ1.55±0.1 　　　　　 0 0.25±0.05 8.0±0.2 2.75 1.43±0.05 4.0±0.1 φ1.0±0.2 　　　　　0 2.8±0.05 0.9±0.08  Absolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) Average rectified forward current Io IFSM Forward current surge peak (60Hz 1cyc) ・ Junction temperature Tj Storage temperature Tstg Limits 30 30 1 3 150 40 to 150 Unit V V A A °C °C  Electrical characteristics (Ta=25°C) Parameter Symbol Forward voltage Reverse current VF 1 VF 2 IR Min. - Typ. 0.45 0.48 1 Max. 0.49 0.52 30 Unit V V μA IF=700mA IF=1A VR=10V Conditions www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.05 - Rev.D 0.8 0.5  Features 1)Small mold type（TUMD2） 2)Low VF, Low IR 2.0 RB550VA-30 Data Sheet 1 Ta=75℃ 100000 Ta=150℃ 10000 Ta=125℃ Ta=75℃ Ta=25℃ 1000 f=1MHz REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) 0.1 1000 100 10 1 0.1 0.01 Ta=-25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 30 Ta=125℃ Ta=150℃ Ta=25℃ Ta=-25℃ 0.01 100 10 0.001 0 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 600 0 5 10 15 20 25 1 0 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 490 FORWARD VOLTAGE:VF(mV) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 480 REVERSE CURRENT:IR(nA) Ta=25℃ IF=0.7A n=30pcs 30 25 20 15 10 AVE:3.141uA 5 0 Ta=25℃ VR=30V n=30pcs 200 190 180 170 160 150 140 130 120 110 100 IR DISPERSION MAP Ct DISPERSION MAP AVE:149.9pF Ta=25℃ f=1MHz VR=0V n=10pcs 470 460 450 AVE:459.6mV 440 VF DISPERSION MAP 30 30 20 REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 25 20 15 10 5 0 Ifsm 25 20 15 10 5 0 AVE:8.3ns PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc 8.3ms Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm Ifsm 15 8.3ms 8.3ms 8.3ms 8.3ms 1cyc 1cyc 10 AVE:15.1A 5 0 1 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 IFSM DISRESION MAP 30 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 1000 Mounted on epoxy board IM=10mA IF=0.2A 1 0.8 PEAK SURGE FORWARD CURRENT:IFSM(A) 25 20 15 10 5 0 1 Ifsm t 1ms time Rth(j-a) FORWARD POWER DISSIPATION:Pf(W) 300us 0.6 0.4 0.2 0 D=1/2 Sin(θ＝180) DC 100 Rth(j-c) 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 10 0.001 0.1TIME:t(s) 10 Rth-t CHARACTERISTICS 1000 0 0.5 1 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 1.5 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.05 - Rev.D RB550VA-30 Data Sheet 1 0.8 1.5 DC 0A 0V Io t T VR D=t/T VR=15V Tj=150℃ 1.5 D=1/2 DC Sin(θ＝180) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 1 D=1/2 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 1 0.6 0.4 0.2 0 0 10 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 30 Sin(θ＝180) D=1/2 DC 0.5 Sin(θ＝180) 0.5 0A 0V Io t T VR D=t/T VR=15V Tj=150℃ 75 100 125 150 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 0 0 25 50 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.05 - Rev.D Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A