RB551V-30_11

Data Sheet Schottky barrier Diode RB551V-30  Applications High frequency rectification  Dimensions (Unit : mm) 1.25±0.1 0.1±0.1 　　　 0.05  Land size figure (Unit : mm) 0.9MIN.  Features 1) Small mold type. (UMD2) 2) Low VF. 3) High reliability. 0.8MIN . 1.7±0.1 2.5±0.2 UMD2  Construction Silicon epitaxial planar 0.3±0.05 0.7±0.2 　　　 0.1  Structure ROHM : UMD2 JEDEC : S0D-323 JEITA : SC-90/A dot (year week factory)  Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 1.75±0.1 0.3±0.1 3.5±0.05 8.0±0.2 1.40±0.1 4.0±0.1 φ1.05 1.0±0.1  Absolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive peak) VR Reverse voltage (DC) Average rectified forward current Io IFSM Forward current surge peak (60Hz 1cyc) ・ Junction temperature Tj Storage temperature Tstg Limits 30 20 500 2 125 40 to 125 Unit V V mA A °C °C  Electrical characteristics (Ta=25°C) Parameter Symbol Forward voltage Reverse current VF 1 VF 2 IR Min. - Typ. - Max. 0.36 0.47 100 Unit V V μA IF=100mA IF=500mA VR=20V 2.75 Conditions www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2.8±0.1 2011.05 - Rev.C 2.1 RB551V-30 Data Sheet 1000 Ta=125 ℃ 100000 Ta=125℃ REVERSE CURRENT:IR(uA) 100 f=1MHz FORWARD CURRENT:IF(mA) 10000 1000 100 10 1 0.1 Ta=75℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 Ta=75 ℃ Ta=25℃ 10 Ta=-25℃ Ta=25℃ 10 1 Ta=-25℃ 0.1 0 100 200 300 400 500 600 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0 10 20 30 1 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 450 FORWARD VOLTAGE:VF(mV) 200 REVERSE CURRENT:IR(uA) Ta=25℃ IF=500mA n=30pcs 80 Ta=25℃ VR=20V n=30pcs Ta=25℃ f=1MHz VR=0V n=10pcs 180 160 140 120 100 80 60 40 20 0 AVE:42.7uA CAPACITANCE BETWEEN TERMINALS:Ct(pF) 440 430 420 410 AVE:420.4mV 70 60 50 AVE:59.5pF 400 40 VF DISPERSION MAP IR DISPERSIPN MAP Ct DISPERSION MAP 20 PEAK SURGE FORWARD CURRENT:IFSM(A) 100 PEAK SURGE FORWARD CURRENT:IFSM(A) 100 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 15 1cyc 8.3ms Ifsm 8.3ms 8.3ms 1cyc 10 Ifsm t 10 10 5 AVE:8.60A 0 1 1 IFSM DISPERSION MAP 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0.1 1 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 0.5 Rth(j-a) 0.4 D=1/2 DC 0.5 0.4 REVERSE POWER DISSIPATION:PR ( W) 100 Rth(j-c) Mounted on epoxy board IM=1mA IF=10mA FORWARD POWER DISSIPATION:Pf(W) 0.3 0.2 0.1 0 Sin(θ＝180) 0.3 0.2 D=1/2 Sin( θ＝180) 10 1ms time 0.1 0 0 0.2 0.4 0.6 0.8 1 0 DC 300us 1 0.001 0.1 10 1000 5 10 15 20 TIME:t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT Io(A) Io-Pf CHARACTERISTICS REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.05 - Rev.C RB551V-30 Data Sheet 0A 0V Io t T VR D=t/T VR=15V Tj=125 ℃ 1 0.9 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0A Io t T 1 0.9 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) DC 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 DC 0V VR D=t/T VR=15V Tj=125℃ 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Sin(θ ＝180) D=1/2 D=1/2 Sin(θ＝180) 25 50 75 100 125 0 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) AMBIENT TEMPERATURE:Ta(℃) Derating Curve ﾞ(Io-Ta) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.05 - Rev.C Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A