RB551VM-30

Data Sheet Schottky Barrier Diode RB551VM-30 lApplications High speed switching lDimensions (Unit : mm) 1.25±0.1 0.1±0.1 　　　 0.05 lLand size figure (Unit : mm) 0.9MIN. 1.7±0.1 3)High reliability UMD2 lConstruction Silicon epitaxial 2.5±0.2 lFeatures 1)Small mold type. (UMD2) 2)Low VF 0.8MIN. 0 .3±0.05 0.7±0.2 　　　 0.1 lStructure ROHM : UMD2 JEDEC : SOD-323 JEITA : SC-901A dot (year week factory) lTaping specifications (Unit : mm) 4 .0±0.1 2.0±0.05 φ 1.55±0.05 1.75±0.1 0.3±0.1 3.5±0.05 8.0±0.2 1.40±0.1 4.0±0.1 φ 1.05 1.0±0.1 lAbsolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) Average rectified forward current Io IFSM Forward current surge peak (60Hz・1cyc) Junction temperature Tj Storage temperature Tstg Limits 30 20 500 2 125 -40 to +125 Unit V V mA A °C °C lElectrical characteristics (Ta=25°C) Parameter Symbol VF1 Forward voltage VF2 Reverse current IR Min. - Typ. - Max. 0.36 0.47 100 Unit V V μA IF=100mA IF=500mA VR=20V Conditions www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2.75 1/3 2011.06 - Rev.A 2.8±0.1 2.1 RB551VM-30 　 Data Sheet 1000 Ta=125℃ 100000 Ta=125℃ 10000 REVERSE CURRENT:IR(uA) Ta=75℃ 1000 100 10 1 0.1 0 100 200 300 400 500 0 10 20 30 Ta=25℃ 100 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) FORWARD CURRENT:IF(mA) 100 Ta=75℃ Ta=25℃ 10 10 Ta=-25℃ Ta=-25℃ 1 0.1 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS 450 FORWARD VOLTAGE:VF(mV) Ta=25℃ IF=500mA n=30pcs 1 0 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 200 180 REVERSE CURRENT:IR(uA) 160 140 120 100 80 60 40 20 AVE:42.7uA 0 40 Ta=25℃ VR=20V n=30pcs 80 440 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 70 Ta=25℃ f=1MHz VR=0V n=10pcs 430 60 420 50 AVE:59.5pF 410 AVE:420.4mV 400 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 20 1cyc 15 Ifsm 8.3ms 10 10 Ifsm 8.3ms 8.3ms 15 Ifsm t PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc PEAK SURGE FORWARD CURRENT:IFSM(A) 100 10 AVE:3.62A 5 5 0 1 1 IFSM DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 0.5 Mounted on epoxy board Rth(j-a) 0.4 FORWARD POWER DISSIPATION:Pf(W) D=1/2 DC REVERSE POWER DISSIPATION:PR (W) 0 0.1 1 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS 0.3 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 100 0.2 Sin(θ＝180) Rth(j-c) 0.3 Sin(θ＝180) 0.2 10 0.1 DC D=1/2 0.1 1 0.001 0 0.1 10 1000 0 0.2 0.4 0.6 0.8 1 TIME:t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT Io(A) Io-Pf CHARACTERISTICS 0 0 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.06 - Rev.A RB551VM-30 　 Data Sheet 0A 0V 1 0.9 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 25 50 75 100 Sin(θ＝180) D=1/2 DC t T Io VR D=t/T VR=10V Tj=125℃ AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 125 0 0 25 D=1/2 DC 0A 0V t T Io VR D=t/T VR=10V Tj=125℃ Sin(θ＝180) 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) DERATING CURVE (Io-Ta) CASE TEMPARATURE:Tc(℃) DERATING CURVE (Io-Tc) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.06 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A