RB558W_11

Data Sheet Shottky barrier diode RB558W Applications Low current rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 1.0 0.5 0.5 0.15± 0.05 1.6±0.2 0.3±0.1 　　　 0.05 0.1Min Features 1) Ultra small power mold type. (EMD3) 2) Low IR 3) High reliability. 0.2±0.1 　　-0.05 (2) 0.7 (3) 1.6±0.2 0.8±0.1 0～ 0.1 0.7 0.7 0.6 EMD3 0.6 (1) 0.55± 0.1 0.7±0.1 Construction Silicon epitaxial planar 0.5 0.5 1.0± 0.1 Structure ROHM : EMD3 JEDEC : SOT-416 JEITA : SC-75A dot (year week factory Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.1 φ1.5 0.1 　　　　　0 0 1.75±0.1 0.3±0.1 3.5±0.05 1.8±0.2 5.5±0.2 1.8±0.1 φ0.5±0.1 0～0.1 8.0±0.2 0.9±0.2 Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz・1cyc) (*1) Junction temperature Storage temperature (*1) Rating of per diode Symbol VR Io IFSM Tj Tstg Limits 30 100 500 125 40 to 125 Unit V mA mA °C °C Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Symbol VF1 VF2 IR Min. - Typ. - Max. 0.35 0.49 10 Unit V V μA Conditions IF=10mA IF=100mA VR=10V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.04 - Rev.B 1.3 RB558W Data Sheet 1000 10000 Ta=125℃ 100 f=1MHｚ FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) 10 1 0.1 0.01 0.001 Ta=75℃ Ta=75℃ 100 10 1 Ta=-25℃ 0.1 0.01 Ta=25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 30 100 Ta=125℃ 1000 Ta=-25℃ Ta=25℃ 10 1 0 10 20 0 5 10 15 20 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 0 100 200 300 400 500 600 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 300 30 20 Ta=25℃ VR=10V n=30pcs 19 18 17 16 15 14 13 12 11 AVE:17.34pF 10 Ta=25℃ f=1MHz VR=0V n=10pcs FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) 280 270 260 AVE:270.2mV 250 20 15 10 5 0 AVE:2.017uA VF DISPERSION MAP CAPACITANCE BETWEEN TERMINALS:Ct(pF) 290 Ta=25℃ IF=10mA n=30pcs 25 IR DISPERSION MAP Ct DISPERSION MAP 20 10 10 Ifsm 8.3ms 8.3ms 1cyc PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 15 1cyc 8.3ms Ifsm t 10 AVE:3.90A 5 5 5 0 0 1 IFSM DISRESION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0 0.1 1 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 1000 0.1 Rth(j-a) 0.08 D=1/2 0.06 Sin(θ＝180) 0.04 0.02 0 0.1 10 1000 0 TIME:t(s) Rth-t CHARACTERISTICS 0.1 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0.2 DC Per diode 0.1 0.08 Per diode 100 Rth(j-c) Mounted on epoxy board IM=1mA IF=10mA time REVERSE POWER DISSIPATION:PR (W) FORWARD POWER DISSIPATION:Pf(W) 0.06 0.04 0.02 0 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS D=1/2 10 1ms 300us DC Sin(θ＝180) 1 0.001 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.B RB558W Data Sheet 0.3 0.3 VR D=t/T VR=15V Tj=125℃ AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Per diode 0.2 0A 0V Io t T Per diode DC 0A 0V Io t T VR D=t/T VR=15V Tj=125℃ DC D=1/2 0.2 D=1/2 0.1 Sin(θ＝180) 0 0.1 Sin(θ＝180) 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A