Data Sheet
Shottky barrier diode
RB706D-40
Applications Low current rectification Dimensions (Unit : mm) Land size figure (Unit : mm)
1.9
2.8±0.2
1.6-0.1
Features 1) Small mold type. (SMD3) 2) Low IR 3) High reliability.
(3)
+0.2
0~0.1 0.3~0.6
(2)
(1) 0.95
0.8±0.1
0.2 1.1±0.2 1.1 0.1 0.01
Construction Silicon epitaxial planar
0.95
1.9±0.2
Structure
ROHM : SMD3 JEDEC :S0T-346 JEITA : SC-59 week code
Taping specifications(Unit : mm)
4.0±0.1 2.0±0.05 φ1.5±0.1 0
1.75±0.1
1.0MIN.
0.15 -0.06
+0.1
0.95
0.8MIN. SMD3
0.3±0.1
3.5±0.05
8.0±0.2
3.2±0.1
3.2±0.1
4.0±0.1
φ1.05MIN
0~0.5
5.5±0.2
3.2±0.1
1.35±0.1
Absolute maximum ratings(Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward voltage (*1) Forward current surge peak (60Hz 1cyc) (*1) ・ Junction temperature Storage temperature (*1) Rating of per diode : lo/2
Symbol VRM VR Io IFSM Tj Tstg
Limits 45 40 30 200 125 40 to 125
Unit V V mA mA °C °C
Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminals
Symbol VF1 IR1 Ct1
Min. -
Typ. 2.0
Max. 0.37 1 -
Unit V μA pF
Conditions IF=1mA VR=10V VR=1V , f=1MHz
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1/3
2011.03 - Rev.C
2.4
2.9±0.2 各リードとも 同寸法 0.4 +0.1 Each lead has same dimension -0.05
RB706D-40
Data Sheet
100
1000
10 Ta=125℃ f=1MHz
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(uA)
Ta=125℃ 10 Ta=75℃ 1 Ta=-25℃ 0.1 Ta=25℃
10 1 0.1 0.01 0.001
Ta=75℃ Ta=25℃ Ta=-25℃
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
100
1
0.01
0 100 200 300 400 500 600 700 800 900 1000
0
10
20
30
0.1 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS
FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS
REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS
300
1
10
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(nA)
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
290 280 270 260 AVE:267.4mV 250
Ta=25℃ IF=1mA n=30pcs
0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 AVE:0.083uA
Ta=25℃ VR=10V n=30pcs
9 8 7 6 5 4 3 2 1 0 AVE:2.00pF
Ta=25℃ f=1MHz VR=1V n=10pcs
VF DIPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
20
20
10
PEAK SURGE FORWARD CURRENT:IFSM(A)
PEAK SURGE FORWARD CURRENT:IFSM(A)
PEAK SURGE FORWARD CURRENT:IFSM(A)
Ifsm 15
1cyc 8.3ms
Ifsm 8.3ms 8.3ms 1cyc
9 8 7 6 5 4 3 2 1 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 Ifsm t
15
10
10
5 AVE:7.30A 0
5
0 1 IFSM DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100
TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W)
1000 Rth(j-a)
0.04
0.003
REVERSE POWER DISSIPATION:PR (W)
FORWARD POWER DISSIPATION:Pf(W)
0.03
D=1/2 Sin(θ=180)
100 Rth(j-c)
Mounted on epoxy board IM=1mA IF=10mA
0.002 D=1/2 DC 0.001 Sin(θ=180)
0.02 DC
10
0.01
1ms
time
300us
1 0.001
0.00 TIME:t(s) Rth-t CHARACTERISTICS 0.1 10 1000 0.00 0.01 0.02 0.03 0.04 0.05 AVERAGE RECTIFIED FORWARD CURRENT Io(A) Io-Pf CHARACTERISTICS
0 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS
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2/3
2011.03 - Rev.C
RB706D-40
Data Sheet
0.1 Per chip
0.1
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
0.08 0.06 0.04 0.02 0 0 25 50
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
0A 0V
Io t T VR D=t/T VR=20V Tj=125℃
Per chip 0.08 0.06 0.04 0.02 Sin(θ=180) 0 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curve゙(Io-Tc) 0A 0V DC D=1/2 Io t T VR D=t/T VR=20V Tj=125℃
DC D=1/2
Sin(θ=180)
75
100
125
AMBIENT TEMPERATURE:Ta(℃) Derating Curve゙(Io-Ta)
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3/3
2011.03 - Rev.C
Notice
Notes
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http://www.rohm.com/contact/
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R1120A
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