RB751CS-40_11

Data Sheet Schottky barrier diode RB751CS-40 Applications Low current rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 0. 55 0.6±0.05 Features 1) Ultra Small mold type(VMN2) 2) Low VF 3) High reliability 0. 45 0.16±0.05 0.9±0.05 1.0±0.05 VM D2 Structure Silicon epitaxial planer Structure 0.156 0.35±0.1 0.37±0.03 ROHM : VMN2 dot (year week factory)+day Taping dimensions (Unit : mm) 4±0. 1 2±0. 05 φ1. 55 0. 2±0. 05 1. 75±0. 1 3. 5±0. 05 0. 45 1. 1±0. 05 φ0. 5 0. 7±0. 05 2±0. 05 4. 0±0. 1 0. 52 Absolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak(60Hz/1cyc) Junction temperature Storage temperature VRM VR Io IFSM Tj Tstg Limits 40 30 30 200 125 40 to 125 Unit V V mA mA °C °C Electrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminals Symbol VF IR Ct Min. - Typ. Max. 0.37 0.5 Unit V μA pF Conditions IF=1mA VR=30V VR=1V , f=1MHz 2 - www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.05 - Rev.A 8. 0±0. 2 0. 5 RB751CS-40 Electrical characteristic curves 100 100000 　 Data Sheet Ta=125 C 10 f=1MHz FORWARD CURRENT:I F(mA) Ta=75 C Ta=125 C 1 Ta=25 C Ta=-25 C 1000 Ta=25 C 100 Ta=-25 C CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 Ta=75 C 0REVERSE CURRENT:IR(nA) 10000 1 0.1 0.01 10 0.001 0 100 200 300 400 500 600 700 800 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 1 0 5 10 15 20 25 30 35 40 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 0.1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 330 1000 Ta=25 C IF=1mA n=30pcs 900 Ta=25 C VR=30V n=30pcs 10 9 Ta=25 C f=1MHz VR=0V n=10pcs FORWARD VOLTAGE:V F(mV) REVERSE CURRENT:IR(nA) 700 600 500 400 300 200 100 0 AVE:111.0nA CAPACITANCE BETWEEN TERMINALS:Ct(pF) 320 800 8 7 6 5 4 3 2 1 0 AVE:1.81pF 310 300 290 AVE:304.2mV 280 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 20 30 10 Ta=25 C IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm 8.3ms 6 8.3ms PEAK SURGE FORWARD CURRENT:I FSM(A) 15 8.3ms 10 AVE:3.40A 5 20 15 10 AVE:11.7ns 5 0 PEAK SURGE FORWARD CURRENT:I FSM(A) Ifsm 1cyc REVERSE RECOVERY TIME:trr(ns) 25 8 1cyc 4 2 0 0 1 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 IFSM DISRESION MAP 10 1000 0.05 Rth(j-a) 0.04 8 Ifsm t TRANSIENT THAERMAL IMPEDANCE:Rth ( C/W) PEAK SURGE FORWARD CURRENT:I FSM(A) 6 Rth(j-c) 100 Mounted on epoxy board IM=10mA 1ms time FORWARD POWER DISSIPATION:Pf(W) 0.03 Sin(=180) 0.02 D=1/2 4 IF=100mA DC 2 0.01 300us 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 10 0.001 0 0.01 0.1 1 10 TIME:t(ms) Rth-t CHARACTERISTICS 100 1000 0 0.01 0.02 0.03 0.04 0.05 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.05 - Rev.A RB751CS-40 　 Data Sheet 0.003 0.1 0A Io 0.1 0A Io t T VR D=t/T VR=20V Tj=125 C 0V t T DC AVERAGE RECTIFIDE FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 0.002 0.06 D=t/T VR=20V Tj=125 C AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.08 VR 0.08 0V 0.06 DC D=1/2 D=1/2 0.001 DC Sin(=180) 0.04 D=1/2 0.04 0.02 Sin(=180) 0.02 Sin(=180) 0 0 10 20 30 40 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 0 0 25 50 75 100 125 AMBIENT TEMPERATURE : Ta( C) Derating Curve"(Io-Ta) 0 0 25 50 75 100 CASE TEMPARATURE:Tc( C) Derating Curve"(Io-Tc) 125 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.05 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A