RB751G-40

Data Sheet Schottky barrier Diode RB751G-40  Applications General rectification  Dimensions (Unit : mm) 0.13±0.03  Land size figure (Unit : mm) 0.5 0.5 0.6±0.05 1.0±0.05 1.4±0.05  Features 1) Small power mold type.(VMD2) 2) Low VF 3) High reliability VMD2  Construction Silicon epitaxial planar 0.27±0.03  Structure 0.5±0.05 ROHM : VMD2 dot (year week factory)  Taping specifications (Unit : mm) 4±0.1 2±0.05 φ1.5+0.1 　　　　　0 0.18±0.05 3.5±0.05 1.75±0.1 1.11±0.05 2.1±0.1 φ0.5 0.76±0.1 4±0.1 2±0.05 0.4 8.0±0.3 0.1 0.3 0.65±0.05  Absolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive peak) VR Reverse voltage (DC) Average rectified forward current Io IFSM Forward current surge peak (60Hz 1cyc) ・ Junction temperature Tj Storage temperature Tstg Limits 40 30 30 200 125 40 to 125 Unit V V mA mA °C °C  Electrical characteristics (Ta=25°C) Parameter Symbol Forward voltage Reverse current Capacitance between terminals VF IR Ct Min. - Typ. 2 Max. 0.37 0.5 - Unit V μA pF IF=1mA VR=30V Conditions VR=1V , f=1MHz www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.05 - Rev.B 1.2 RB751G-40 Data Sheet 100 100000 Ta=125℃ 10 f=1MHz FORWARD CURRENT:IF(mA) 10000 1000 Ta=125℃ 1 0.1 0.01 0.001 0 100 200 300 400 500 600 700 800 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS Ta=25℃ Ta=-25℃ Ta=75℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 REVERSE CURRENT:IR(nA) Ta=75℃ Ta=25℃ 100 10 1 0 5 10 15 20 25 30 35 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 40 Ta=-25℃ 1 0.1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 330 1000 10 FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(nA) 320 310 300 290 AVE:304.2mV 280 VF DISPERSION MAP 700 600 500 400 300 200 100 0 AVE:111.0nA CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ IF=1mA n=30pcs 900 800 Ta=25℃ VR=30V n=30pcs 9 8 7 6 5 4 3 2 1 0 AVE:1.81pF Ta=25℃ f=1MHz VR=0V n=10pcs IR DISPERSION MAP Ct DISPERSION MAP 20 30 10 REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 25 20 15 10 5 0 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 15 1cyc 8.3ms Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 8 6 Ifsm 8.3ms 8.3ms 1cyc 10 AVE:3.40A 5 4 2 AVE:11.7ns 0 IFSM DISRESION MAP 0 1 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 10 1000 Ifsm t 0.05 Rth(j-a) 0.04 8 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) FORWARD POWER DISSIPATION:Pf(W) 6 Rth(j-c) 100 Mounted on epoxy board IM=1mA IF=10mA 0.03 Sin(θ＝180) 0.02 0.01 D=1/2 DC 4 2 1ms time 0 0.1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 1 100 10 0.001 300us 0 1000 0 0.01 0.02 0.03 0.04 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0.05 10 TIME:t(s) Rth-t CHARACTERISTICS 0.1 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.05 - Rev.B RB751G-40 Data Sheet 0.003 0.1 0.1 0A 0V Io 0.08 0.06 0.04 0.02 Sin(θ＝180) 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 0A 0V Io t T VR D=t/T VR=20V Tj=125℃ AVERAGE RECTIFIDE FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) t T 0.002 DC Sin(θ＝180) D=1/2 0.06 0.04 0.02 DC D=1/2 VR D=t/T VR=20V Tj=125℃ AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.08 DC D=1/2 0.001 Sin(θ＝180) 0 0 10 20 30 40 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 0 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.05 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A