RB751S-40

RB751S-40 Diodes Schottky barrier diode RB751S-40 Applications Low current rectification External dimensions (Unit : mm) 0.8±0.05 0.1 2±0.05 Land size figure 0.8 0.6 1.2±0.05 Features 1) Ultra small mold type. (EMD2) 2) Low VF 3) High reliability 1.6±0.1 EM D 2 Construction Silicon epitaxial planar 0.3±0.05 Structure 0.6±0.1 ROHM : EMD2 JEDEC :SOD-523 JEITA : S C-79 do t (ye ar we e k fac to ry) Taping specifications (Unit : mm) 0.2±0.05 4.0 ±0.1 2.0±0.05 φ1 .5 ±0 .0 5 3.5±0.05 1.75±0.1 8.0±0.1 5 1 .3±0.06 0 1.26±0.05 0 0.2 0.76±0.05 2.45±0.1 φ0 .5 0 .95±0.06 0 空ポケット E mpty poc ket 4.0±0.1 2.0±0.05 Absolute maximum ratings (Ta=25°C) Pa ra m e te r R e ve rs e vo l tag e (repeti ti ve peak ) R e ve rs e vo l tag e (D C ) Average re c ti fi ed fo rw ard c u rrent Fo rw ard c u rre nt s u rge p eak （ 60H z・ 1c yc ） J unc ti on te m p erature S torage te m p e rature S ym bol VRM VR Io IFSM Tj Ts tg Li m i ts 40 30 30 200 125 -40 to + 1 2 5 U n it V V mA mA ℃ ℃ Electrical characteristic (Ta=25°C) Pa ra m e te r Fo rw ard vo l tage R e ve rs e cu rre n t C a p a ci tanc e be tw een te rm i n s l s S ym bol VF IR Ct Mi n. Typ . 2 Ma x. 0.37 0 .5 U n it V µA pF IF =1 m A VR = 30V VR =1 V , f= 1 MH z C o ndi ti ons 0.6 Rev.B 1.7 1/3 RB751S-40 Diodes Electrical characteristic curves 100 1000 Ta=125℃ Ta=125℃ 10 f=1MHz FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) 10 Ta=75℃ 1 Ta=-25℃ 0.1 Ta=25℃ 10 1 0.1 0.01 0.001 0 10 20 Ta=75℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 30 100 Ta=25℃ Ta=-25℃ 1 0.01 0 100 200 300 400 500 600 700 800 900 100 0 0.1 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS VF分布 300 1000 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 10 FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(nA) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 290 280 270 260 AVE:267.4mV 250 Ta=25℃ IF=1mA n=30pcs 900 800 700 600 500 400 300 200 100 0 AVE:185.5nA Ta=25℃ VR=30V n=30pcs 9 8 7 6 5 4 3 2 1 0 Ta=25℃ f=1MHz VR=1V n=10pcs AVE:2.00pF VF DIPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 20 20 10 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 15 1cyc 8.3ms Ifsm 8.3ms 8.3ms 1cyc 9 8 7 6 5 4 3 2 1 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 10 0 Ifsm t 15 10 10 5 AVE:7.30A 0 5 0 1 IFSM DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 1 00 10000 Mounted on epoxy board IM=1mA IF=10mA 0.04 DC 0.003 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 1000 1ms time REVERSE POWER DISSIPATION:PR (W) FORWARD POWER DISSIPATION:Pf(W) 0.03 D=1/2 Sin(θ＝180) 300us Rth(j-a) 0.002 DC 0.001 Sin(θ＝180) D=1/2 0.02 100 Rth(j-c) 0.01 10 0.001 0.00 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 0.00 0.01 0.02 0.03 0.04 0.05 0 0 10 20 30 AVERAGE RECTIFIED FORWARD CURRENT Io(A) Io-Pf CHARACTERISTICS REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS Rev.B 2/3 RB751S-40 Diodes 0.1 0.1 VR D=t/T VR=15V Tj=125℃ AVERAGE RECTIFI FORWARD CURRENT:Io(A) 0.08 0.06 0.04 0.02 0 0 25 DC D=1/2 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0A 0V Io t T 0.08 0.06 0.04 0.02 Sin(θ＝180) 0 0 25 50 DC D=1/2 0A 0V Io t T VR D=t/T VR=15V Tj=125℃ Sin(θ＝180) 50 75 100 125 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1