RB751S-40_11

Data Sheet Schottky barrier diode RB751S-40 Applications Low current rectification Dimensions (Unit : mm) 0.8±0.05 0.12±0.05 Land size figure (Unit : mm) 0.8 0.6 1.2±0.05 Features 1) Ultra small mold type. (EMD2) 2) Low VF 3) High reliability 1.6±0.1 EMD2 Construction Silicon epitaxial planar 0.3±0.05 Structure 0.6±0.1 ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) Taping specifications(Unit : mm) 0.2±0.05 4.0±0.1 2.0±0.05 φ1.5±0.05 φ1.55±0.05 3.5±0.05 1.75±0.1 8.0±0.15 2.40±0.05 2.45±0.1 1.25 0.06 1.3±0.06 0 1.25 0.06 1.26±0.05 0 0.6 0 0.2 0.76±0.05 0.75±0.05 φ0.5 0.95±0.06 0.90± 0.05 0 空ポケット Empty pocket 4.0±0.1 2.0±0.05 Absolute maximum ratings(Ta=25°C) Parameter Symbol Reverse voltage (repetitive peak) VRM VR Reverse voltage (DC) Average retified forward current Io IFSM Forward currnt surge peak(60Hz/1cyc) Junction temperature Tj Storage temperature Tstg Limits 40 30 30 200 125 -40 to +125 Unit V V mA mA °C °C Electrical characteristics (Ta=25°C) Parameter Symbol VF Forward voltage Reverse current Capacitance between terminals IR Ct Min. - Typ. 2 Max. 0.37 0.5 - Unit V μA pF IF=1mA VR=30V Conditions VR=1V , f=1MHz www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.03 - Rev.C 1.7 RB751S-40  Electrical characteristic curves 100 1000 Ta=125℃ Ta=125℃ 10 Data Sheet FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) 10 Ta=75℃ 1 Ta=-25℃ 0.1 Ta=25℃ 10 1 0.1 0.01 0.001 0 10 20 Ta=75℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 f=1MHz Ta=25℃ Ta=-25℃ 1 0.01 0 100 200 300 400 500 600 700 800 900 100 0 30 0.1 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS VF分布 300 1000 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 10 FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(nA) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 290 280 270 260 AVE:267.4mV 250 Ta=25℃ IF=1mA n=30pcs 900 800 700 600 500 400 300 200 100 0 AVE:185.5nA Ta=25℃ VR=30V n=30pcs 9 8 7 6 5 4 3 2 1 0 Ta=25℃ f=1MHz VR=1V n=10pcs AVE:2.00pF VF DIPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 20 20 10 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 15 1cyc 8.3ms Ifsm 8.3ms 8.3ms 1cyc 9 8 7 6 5 4 3 2 1 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 Ifsm t 15 10 10 5 AVE:7.30A 0 5 0 1 IFSM DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 10000 Mounted on epoxy board IM=1mA IF=10mA 0.04 DC 0.003 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 1000 1ms time REVERSE POWER DISSIPATION:PR (W) FORWARD POWER DISSIPATION:Pf(W) 0.03 D=1/2 Sin(θ＝180) 300us Rth(j-a) 0.002 DC 0.001 Sin(θ＝180) D=1/2 0.02 100 Rth(j-c) 0.01 10 0.001 0.00 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 0.00 0.01 0.02 0.03 0.04 0.05 0 0 10 20 30 AVERAGE RECTIFIED FORWARD CURRENT Io(A) Io-Pf CHARACTERISTICS REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.03 - Rev.C RB751S-40 Data Sheet 0.1 AVERAGE RECTIFIDE FORWARD CURRENT:Io(A) 0.1 VR D=t/T VR=15V Tj=125℃ AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.08 0.06 0.04 0.02 0 0 25 DC D=1/2 0A 0V Io t T 0.08 0.06 0.04 0.02 Sin(θ＝180) 0 0 25 50 DC D=1/2 0A 0V Io t T VR D=t/T VR=15V Tj=125℃ Sin(θ＝180) 50 75 100 125 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.03 - Rev.C Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A