RB751VM-40

Data Sheet Schottky Barrier Diode RB751VM-40 lApplications High speed switching lDimensions (Unit : mm) 1.25±0.1 0.1±0.1 　　　 0.05 lLand size figure (Unit : mm) 1.7±0.1 3)High reliability UMD2 lConstruction Silicon epitaxial 2.5±0.2 lFeatures 1)Ultra small mold type. (UMD2) 2)Low IR 0.8MIN. 0.9MIN. 0 .3±0.05 0.7±0.2 　　　 0.1 lStructure ROHM : UMD2 JEDEC : SOD-323 JEITA : SC-901A dot (year week factory) lTaping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ 1.55±0.05 1.75±0.1 0.3±0.1 3.5±0.05 8.0±0.2 1.40±0.1 4.0±0.1 φ 1.05 1.0±0.1 lAbsolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) Average rectified forward current Io IFSM Forward current surge peak (60Hz・1cyc) Junction temperature Tj Storage temperature Tstg Limits 40 30 30 200 150 -40 to +150 Unit V V mA mA °C °C lElectrical characteristics (Ta=25°C) Parameter Symbol VF Forward voltage Reverse current Capacitance between terminals IR Ct Min. - Typ. 2 Max. 0.37 0.5 - Unit V μA pF IF=1mA VR=30V VR=1V , f=1MHz www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2.75 Conditions 1/3 2011.06 - Rev.A 2.8±0.1 2.1 RB751VM-40 　 Data Sheet 100 Ta=125℃ FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) 1000 100 10 1 0.1 0.01 Ta=125℃ 10 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) 30 10 Ta=75℃ 1 Ta=-25℃ Ta=25℃ Ta=75℃ Ta=25℃ 1 0.1 Ta=-25℃ 0.01 0 100 200 300 400 500 600 700 800 900 1000 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS 320 FORWARD VOLTAGE:VF(mV) 310 300 290 280 AVE:282.4mV 270 260 Ta=25℃ IF=1mA n=30pcs 0.001 0 10 20 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 1000 900 REVERSE CURRENT:IR(nA) 800 700 600 500 400 300 200 100 AVE:245.0nA Ta=25℃ VR=30V n=30pcs 0.1 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 10 9 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 8 7 6 5 4 3 2 1 0 AVE:2.1pF Ta=25℃ f=1MHz VR=1V n=10pcs 250 0 IR DISPERSION MAP VF DISPERSION MAP 30 REVERSE RECOVERY TIME:trr(ns) Ct DISPERSION MAP 10 IF=0.1A IR=0.1A Irrr=0.1*IR Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 8.3ms 1cyc 5 20 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 15 1cyc 25 8.3ms 10 20 15 AVE:7.7ns 10 5 AVE:3.24A 5 0 IFSM DISPERSION MAP 0 trr DISPERSION MAP 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 20 Ifsm 15 t 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) Mounted on epoxy board Rth(j-a) Rth(j-c) 100 0.05 PEAK SURGE FORWARD CURRENT:IFSM(A) 0.04 FORWARD POWER DISSIPATION:Pf(W) D=1/2 0.03 Sin(θ＝180) 10 0.02 DC 0.01 10 5 0 0.1 1 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS 1 0.001 0.00 0.1 10 1000 0.00 0.01 0.02 0.03 0.04 0.05 TIME:t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT Io(A) Io-Pf CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.06 - Rev.A RB751VM-40 　 Data Sheet 0.01 0.1 Io t 0.06 DC T VR D=t/T VR=15V Tj=150℃ 0.10 0A 0V 0A 0V t 0.06 DC D=1/2 T Io VR D=t/T VR=15V Tj=150℃ AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 0.006 D=1/2 0.004 DC Sin(θ＝180) 0.002 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.008 0.08 0.08 0.04 D=1/2 0.04 0.02 Sin(θ＝180) 0 0.02 Sin(θ＝180) 0.00 0 0 10 20 30 0 25 50 75 100 125 150 0 25 50 75 100 125 150 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS AMBIENT TEMPERATURE:Ta(℃) DERATING CURVE (Io-Ta) CASE TEMPARATURE:Tc(℃) DERATING CURVE (Io-Tc) 5 ELECTROSTATIC DISCHARGE TEST ESD(KV) 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 C=200pF R=0Ω C=100pF R=1.5kΩ AVE:0.418kV AVE:3.34kV ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.06 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A