RB876W_11

Data Sheet Shottky barrier diode RB876W Applications High frequency detection Dimensions (Unit : mm) Land size figure (Unit : mm) 1.0 0.5 0.5 0.15±0.05 0.3±0.1 　　　 0.05 0.8±0.1 1.6±0.2 Features 1) Ultra small mold type. (EMD3) 2) Low Ct and high detection efficiency. (2) 0.7 1.6± 0.2 (3) 0～0.1 0.1Min 0.7 0.7 0.6 EMD3 0.6 0.2±0.1 　　-0.05 (1) 0.55±0.1 0.7±0.1 Construction Silicon epitaxial planar 0.5 0.5 1.0±0.1 Structure ROHM : EMD3 JEDEC : SOT-416 JEITA : SC-75A dot (year week factory) Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.1 φ1.5 0.1 　　　　　0 0 1.75±0.1 0.3±0.1 3.5±0.05 1.8±0.2 5.5±0.2 1.8±0.1 φ0.5±0.1 0～0.1 8.0±0.2 0.9±0.2 Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage Average rectified forward current (*1) Junction temperature Storage temperature (*1) Rating of per diode Symbol VR Io Tj Tstg Limits 5 10 125 40 to 125 Unit V mA °C °C Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminals Symbol VF IR Ct Min. - Typ. 0.53 Max. 0.35 120 0.80 Unit V μA pF Conditions IF=1mA VR=5V VR=1V, f=1MHz www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/2 2011.04 - Rev.B 1.3 RB876W Data Sheet 10 1000 Ta=125℃ 100 Ta=75℃ Ta=25℃ 10 Ta=-25℃ 1 f=1MHz FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) 1 Ta=-25℃ Ta=25℃ 0.1 Ta=75℃ Ta=125℃ 0.01 0 300 600 900 1200 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 1500 1 0 1 2 3 4 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 5 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 0.1 0 1 2 3 4 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 5 1 300 300 FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 290 280 270 260 AVE:275.2mV 250 VF DISPERSION MAP Ta=25℃ IF=1mA n=30pcs 250 200 150 100 50 0 IR DISPERSION MAP AVE:21.63uA Ta=25℃ VR=5V n=30pcs 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 Ct DISPERSION MAP AVE:0.520pF Ta=25℃ f=1MHz VR=1V n=10pcs TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 1000 Rth(j-a) 5 ELECTROSTATIC DDISCHARGE TEST ESD(KV) 4 3 AVE:1.47kV 2 AVE:0.48kV 1 0 Rth(j-c) 100 Mounted on epoxy board IM=1mA IF=10mA 1ms time 300us 10 0.001 0.01 0.1 TIME:t(s) 10 1 100 Rth-t CHARACTERISTICS 1000 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/2 2011.04 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A