RBE05SM20A

Data Sheet Schottky Barrier Diode RBE05SM20A Applications Small current recification Dimensions (Unit : mm) 0.8±0.05 0.12±0.05 Land size figure (Unit : mm) 0.8 1.2±0.05 1.6±0.1 Features 1)Ultra small mold type. (EMD2) 2)High reliability 0.6 EMD2 Structure 0.3±0.05 0.6±0.1 ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) Taping dimensions (Unit : mm) Absolute maximum ratings (Tc=25C) Parameter Symbol Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz・1cyc) Limits 30 20 500 1 125 40 to 125 Junction temperature Storage temperature VRM VR Io IFSM Tj Tstg Unit V V mA A C C Electrical characteristics (Tj=25C) Parameter Symbol Forward voltage Reverse current VF IR Min. - Typ. - Max. 0.53 150 Unit V μA IF=500mA VR=20V Conditions www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.10 - Rev.A 1.7 RBE05SM20A 　 Data Sheet 1 10000 FORWARD CURRENT:IF(A) REVERSE CURRENT:IR(μA) Ta=125°C 1000 Ta=125°C 100 Ta=75°C 0.1 Ta=75°C Ta=25°C Ta=-25°C 0.01 0 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 10 Ta=25°C 1 Ta=-25°C 0.1 0 5 10 15 20 25 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 100 f=1MHz FORWARD VOLTAGE:VF(mV) 450 445 440 435 430 425 420 415 410 405 AVE:423.0mV Ta=25°C IF=500mA n=30pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 400 VF DISPERSION MAP 80 Ta=25°C VR=20V n=30pcs 45 44 43 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 42 41 40 39 38 37 36 AVE:40.56pF Ta=25°C f=1MHz VR=0V n=10pcs REVERSE CURRENT:IR(μA) 70 60 AVE:47.60μA 50 40 30 IR DISPERSION MAP 35 Ct DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.10 - Rev.A RBE05SM20A 　 Data Sheet 10 9 PEAK SURGE FORWARD CURRENT:IFSM(A) 8 7 6 5 4 3 2 1 0 IFSM DISPERSION MAP AVE:4.88A IFSM 8.3ms REVERSE RECOVERY TIME:trr(ns) 1cyc 20 Ta=25°C IF=0.1A IR=0.1A Irr=0.1*IR n=10pcs 15 10 AVE:5.2ns 5 0 trr DISPERSION MAP 10 9 IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) 8 7 6 5 4 3 2 1 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 1cyc 10 9 8 7 6 5 4 3 2 1 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 IFSM t 10000 Mounted on epoxy board TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) 0.5 0.4 1000 FORWARD POWER DISSIPATION:Pf(W) Rth(j-a) 0.3 D=1/2 Sin(θ＝180) 100 Rth(j-c) 0.2 10 0.1 DC 1 0.001 0 0.01 0.1 1 10 100 1000 0 0.2 0.4 0.6 0.8 1 TIME:t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.10 - Rev.A RBE05SM20A 　 Data Sheet 0.5 1 0A 0V Io t T 0.6 D=1/2 DC V D=t/T R VR=10V Tj=125°C 0.4 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 0.8 0.3 0.2 DC 0.4 0.1 Sin(θ＝180) D=1/2 0.2 Sin(θ＝180) 0 0 10 20 30 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE (Io-Ta) REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 1 DC AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.8 Io 0A 0V t T VR D=t/T VR=10V Tj=125°C 30 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) AVE:16.9kV 20 0.6 15 0.4 D=1/2 Sin(θ＝180) 10 AVE:1.9kV 5 0.2 0 0 25 50 75 100 125 CASE TEMPERATURE:Tc(°C) DERATING CURVE (Io-Tc) 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A