RBE05VM20A

Data Sheet Schottky Barrier Diode RBE05VM20A lApplications Small current rectification lDimensions (Unit : mm) 1.25±0.1 0.1±0.1 　　　 0.05 lLand size figure (Unit : mm) 0.9MIN. lFeatures 1)Small mold type. (UMD2) 2)High reliability 0.8MIN. 1.7±0.1 2.5±0.2 UMD2 0.7±0.2 　　　 0.1 0.3±0.05 lStructure ROHM : UMD2 JEDEC : SOD-323 JEITA : SC-901A dot (year week factory) lTaping dimensions (Unit : mm) 4 .0±0.1 2.0±0.05 φ 1.55±0.05 0.3±0.1 3.5±0.05 1.75±0.1 8.0±0.2 1.40±0.1 4.0±0.1 φ 1.05 1.0±0.1 lAbsolute maximum ratings (Tc=25C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) Average rectified forward current Io IFSM Forward current surge peak (60Hz・1cyc) Junction temperature Tj Storage temperature Tstg Limits 30 20 500 2 125 -40 to +125 Unit V V mA A C C lElectrical characteristics (Tj=25C) Parameter Symbol VF Forward voltage Reverse current IR Min. - Typ. - Max. 0.43 200 Unit V μA IF=500mA VR=20V Conditions www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2.75 1/4 2011.10 - Rev.A 2.8±0.1 2.1 RBE05VM20A 　 Data Sheet 1000 Ta=125°C FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR (μA) 100000 10000 Ta=125°C 1000 Ta=75°C 100 Ta=25°C 10 Ta=-25°C 100 Ta=75°C Ta=25°C 10 Ta=-25°C 1 0 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 1 0 5 10 15 20 25 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 100 f=1MHz FORWARD VOLTAGE:VF(mV) 400 395 390 385 380 AVE:384.1mV 375 370 365 360 355 Ta=25°C IF=500mA n=30pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 350 VF DISPERSION MAP 100 Ta=25°C VR=20V n=30pcs 65 Ta=25°C f=1MHz VR=0V n=10pcs AVE:62.8pF 63 REVERSE CURRENT:IR(μA) 90 64 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 80 AVE:84.9μA 70 62 60 61 50 IR DISPERSION MAP 60 Ct DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.10 - Rev.A RBE05VM20A 　 Data Sheet 10 20 Ta=25°C IF=0.5A IR=1A Irr=0.25*IR n=10pcs PEAK SURGE FORWARD CURRENT:IFSM(A) 8 IFSM 8.3ms REVERSE RECOVERY TIME:trr(ns) 1cyc 15 6 AVE:3.52A 4 10 AVE:5.8ns 5 2 0 IFSM DISPERSION MAP 0 trr DISPERSION MAP 10 IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) 8 8.3ms 6 8.3ms 1cyc 10 PEAK SURGE FORWARD CURRENT:IFSM(A) IFSM t 5 4 2 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 10000 Mounted on epoxy board TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) 0.5 0.4 1000 FORWARD POWER DISSIPATION:Pf(W) Rth(j-a) 0.3 D=1/2 0.2 Sin(θ＝180) DC 100 Rth(j-c) 10 0.1 1 0.001 0 0.01 0.1 1 10 100 1000 0 0.2 0.4 0.6 0.8 1 TIME:t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.10 - Rev.A RBE05VM20A 　 Data Sheet 1 1.5 0A 0V AVERAGE RECTIFIED FORWARD CURRENT:Io(A) t 1 D=1/2 DC T VR D=t/T VR=10V Tj=125°C Io REVERSE POWER DISSIPATION:PR (W) 0.5 DC 0.5 Sin(θ＝180) D=1/2 Sin(θ＝180) 0 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE (Io-Ta) 1.5 Io 0A 0V AVERAGE RECTIFIED FORWARD CURRENT:Io(A) t T DC VR ELECTROSTATIC DISCHARGE TEST ESD(KV) D=t/T VR=10V Tj=125°C 30 AVE:25.0kV 25 1 20 15 0.5 D=1/2 Sin(θ＝180) 10 AVE:2.6kV 5 0 0 25 50 75 100 125 CASE TEMPERATURE:Tc(°C) DERATING CURVE (Io-Tc) 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A