RBE07V20A

Data Sheet Schottky Barrier Diode RBE07V20A Applications General rectification Dimensions (Unit : mm) 1.25±0.1 0.1±0.1 　　　 0.05 Land size figure (Unit : mm) Features 1)Small mold type. (UMD2) 2)High reliability 0.8MIN. 0.9MIN. 1.7±0.1 Ｂ 0.3±0.05 2.5±0.2 UMD2 0.7±0.2 　　　 0.1 Structure ROHM : UMD2 JEDEC : SOD-323 JEITA : SC-901A dot (year week factory) Taping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 0.3±0.1 3.5±0.05 1.75±0.1 8.0±0.2 1.40±0.1 4.0±0.1 φ1.05 1.0±0.1 Absolute maximum ratings (Tc=25C) Parameter Symbol Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz・1cyc) Limits 30 20 700 3 125 40 to 125 Junction temperature Storage temperature VRM VR Io IFSM Tj Tstg Unit V V mA A C C Electrical characteristics (Tj=25C) Parameter Symbol Forward voltage Reverse current VF IR Min. - Typ. - Max. 0.43 200 Unit V μA IF=500mA VR=20V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2.75 Conditions 1/4 2011.10 - Rev.A 2.8±0.1 2.1 RBE07V20A 　 Data Sheet 1 Ta=75°C 100000 Ta=125°C 10000 REVERSE CURRENT:IR(μA) FORWARD CURRENT:IF(A) Ta=125°C 0.1 Ta=25°C 1000 Ta=75°C 100 Ta=25°C 0.01 Ta=-25°C 10 Ta=-25°C 1 0.001 0 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0.1 0 5 10 15 20 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 100 f=1MHz FORWARD VOLTAGE:VF(mV) 400 Ta=25°C IF=500mA n=30pcs 390 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 380 10 370 AVE:375.5mV 360 1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 350 VF DISPERSION MAP 200 Ta=25°C VR=20V n=30pcs 150 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 65 Ta=25°C f=1MHz VR=0V n=10pcs REVERSE CURRENT:IR(μA) 64 AVE:83.4μA 100 63 62 AVE:62.8pF 50 61 0 IR DISPERSION MAP 60 Ct DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.10 - Rev.A RBE07V20A 　 Data Sheet 50 30 Ta=25°C IF=0.5A IR=1A Irr=0.25*IR n=10pcs REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 40 25 IFSM 1cyc 20 30 8.3ms 15 20 AVE:8.9A 10 10 AVE:5.8ns 5 0 IFSM DISPERSION MAP 0 trr DISPERSION MAP 20 20 IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 15 8.3ms 8.3ms 15 IFSM t 1cyc 10 10 5 5 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 10000 Mounted on epoxy board TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) 0.6 1000 FORWARD POWER DISSIPATION:Pf(W) Rth(j-a) 0.4 Sin(θ＝180) 100 Rth(j-c) D.C. 0.2 D=1/2 10 1 0.001 0 0.01 0.1 1 10 100 1000 0 0.5 1 1.5 TIME:t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.10 - Rev.A RBE07V20A 　 Data Sheet 0.015 2 0A 0V AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 1.5 t T VR D=t/T VR=10V Tj=125°C Io REVERSE POWER DISSIPATION:PR (W) 0.01 DC 1 D=1/2 DC 0.005 Sin(θ＝180) D=1/2 0.5 Sin(θ＝180) 0 0 10 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 20 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE(Io-Ta) 2 Io 0A 0V AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 1.5 T DC 1 D=1/2 VR D=t/T VR=10V Tj=125°C 30 No break at 30kV 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) 20 15 10 AVE:3.7kV 5 0.5 Sin(θ＝180) 0 0 25 50 75 100 125 CASE TEMPERATURE:Tc(°C) DERATING CURVE(Io-Tc) 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A