RBE1KA20A

Data Sheet Schottky Barrier Diode RBE1KA20A lApplications Rectifying Small Power lDimensions (Unit : mm) 2.0±0.1 1 .3±0.1 0.65 0.65 0.85MAX 0.77±0.05 lFeatures 1)Small power mold type (TUMD5) 2)High reliability 2.1±0.1 1.7±0.1 0～0.1 0.2MAX 0.3 　－0.05 ＋0.1 0.17±0.05 1pin mark ROHM : TUMD5 JEDEC : JEITA : dot (year week factory) lLand size figure (Unit : mm) 1.3 0.65 0.65 lStructure 0.6MIN. 0.4 0.45 lTaping dimensions (Unit : mm) lAbsolute maximum ratings (Tc=25C) Parameter Limits Symbol VRM Reverse voltage (repetitive peak) 30 Reverse voltage (DC) 20 VR Average rectified forward current (*1) 1 Io IFSM Forward current surge peak (60Hz・1cyc) (*2) 3 Junction temperature 125 Tj Storage temperature -40 to +125 Tstg (*1)Rating for each diode Io/2　　(*2)Rating of per diode. lElectrical characteristics (Tj=25C) Parameter Symbol VF Forward voltage Reverse current IR 1.9 Unit V V A A C C Min. - Typ. - Max. 0.43 200 Unit V μA Conditions IF=0.5A VR=20V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.10 - Rev.A RBE1KA20A 　 Data Sheet 10 100000 10000 Ta=125°C REVERSE CURRENT:IR(mA) FORWARD CURRENT:IF(A) 1 1000 Ta=125°C 100 Ta=75°C Ta=75°C 0.1 Ta=25°C Ta=-25°C 0.01 0 100 200 300 400 500 600 700 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 10 Ta=25°C 1 Ta=-25°C 0.1 0 5 10 15 20 25 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 100 f=1MHz FORWARD VOLTAGE:VF(mV) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 400 395 390 385 380 375 370 365 360 355 AVE:384.1mV Ta=25°C IF=500mA n=30pcs 10 1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 350 VF DISPERSION MAP 100 Ta=25°C VR=20V n=30pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) 65 Ta=25°C f=1MHz VR=0V n=10pcs AVE:62.8pF 63 90 REVERSE CURRENT:IR(μA) 64 80 AVE:84.9μA 70 62 60 61 50 IR DISPERSION MAP 60 Ct DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.10 - Rev.A RBE1KA20A 　 Data Sheet 30 20 Ta=25°C IF=0.5A IR=1A Irr=0.25*IR n=10pcs REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 25 IFSM 8.3ms 1cyc 15 20 15 10 AVE:5.8ns 5 10 AVE:13.6A 5 0 IFSM DISPERSION MAP 0 trr DISPERSION MAP 30 IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 20 8.3ms 30 25 PEAK SURGE FORWARD CURRENT:IFSM(A) 25 IFSM t 1cyc 20 15 15 10 10 5 5 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 10000 Mounted on epoxy board TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) 1 1000 Rth(j-a) 100 Rth(j-c) FORWARD POWER DISSIPATION:Pf(W) 0.5 D=1/2 Sin(θ＝180) DC 10 1 0.001 0 0.01 1 10 TIME:t(s) Rth-t CHARACTERISTICS 0.1 100 1000 0 0.5 1 1.5 2 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.10 - Rev.A RBE1KA20A 　 Data Sheet 1 3 0A 0V AVERAGE RECTIFIED FORWARD CURRENT:Io(A) t 2 D=1/2 DC T VR D=t/T VR=10V Tj=125°C Io REVERSE POWER DISSIPATION:PR (W) 0.5 DC 1 Sin(θ＝180) D=1/2 Sin(θ＝180) 0 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE (Io-Ta) 3 Io 0A 0V AVERAGE RECTIFIED FORWARD CURRENT:Io(A) t 2 DC T VR ELECTROSTATIC DISCHARGE TEST ESD(KV) D=t/T VR=10V Tj=125°C 30 AVE:25.0kV 25 20 15 1 D=1/2 Sin(θ＝180) 10 AVE:2.6kV 5 0 0 25 50 75 100 125 CASE TEMPERATURE:Tc(°C) DERATING CURVE (Io-Tc) 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A