RBE1KA20ATR

RBE1KA20A Schottky Barrier Diode Data sheet 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 ● Outline VR 20 V Io 1 A IFSM 3 A 　 　 　 　 　 　 　 　 　 　 　 　　　 ● Features ● Inner Circuit High reliability Small mold type Super low V F ● Application ● Packaging Specifications Packing Embossed Tape Reel Size(mm) 180 Taping Width(mm) 8 Basic Ordering Unit(pcs) 3000 Taping Code TR Marking 5F General rectification ● Structure Silicon epitaxial ● Absolute Maximum Ratings (Tc=25ºC unless otherwise specified) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage Reverse voltage V RM VR Duty≦0.5 Reverse direct voltage 30 20 V V Average rectified forward current Io Glass epoxy mounted、 60Hz half sin waveform、 resistive load、Io/2 per dIode 1 A Peak forward surge current IFSM 60Hz half sin waveform、Non-repetitive、 one cycle、per diode、Ta=25ºC 3 A Junction temperature(1) Storage temperature Tj Tstg - 125 -40 ～ 125 ℃ ℃ Note(1) To avoid occurrence of thermal runaway ， actual board is to be designed to fulfill dPd/dTj