RBE2EA20A

Data Sheet Schottky Barrier Diode RBE2EA20A lApplications Low current rectification lDimensions (Unit : mm) lLand size figure (Unit : mm) 0.8 2.9±0.1 0.4　－0.05 各リードとも同寸法 Each lead has ＋0.1 1.6 －0.1 2.8±0.2 lFeatures 1)Small mold type.(TSMD5) 2)High reliability (5) (4) 0.45 0.35 ＋0.2 0.7 0.35 0.45 0～0.1 0.95 TSMD5 (1) 0.95 (2) 0.95 (3) 0.33±0.03 0.7±0.1 0.85±0.1 1.0Max 1.9±0.2 0.3～0.6 0.95 1.9 lStructure ROHM : TSMD5 dot (year week factory) lTaping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ 1.55±0.05 0.3±0.1 3.5±0.05 1.75±0.1 3.2±0.08 8.0±0.2 3.2±0.08 4.0±0.1 φ 1.1±0.1 0～0.5 5.5±0.2 3.2±0.08 1.1±0.08 lAbsolute maximum ratings (Tc=25C) Parameter Limits Symbol VRM Reverse voltage (repetitive) 30 VR Reverse voltage (DC) 20 Average rectified forwarfd current (*1) 2 Io IFSM Forward current surge peak (60Hz・1cyc)(*2) 5 Junction temperature 125 Tj Storage temperature -40 to +125 Tstg (*1) Business frequencies, Rating of per diode : Io/2 (*2) Rating of per diode lElectrical characteristics (Tj=25C) Parameter Symbol VF Forward voltage Reverse current IR Unit V V A A C C Min. - Typ. - Max. 0.39 700 Unit V μA IF=1A VR=20V Conditions www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.10 - Rev.A 2.4 same dimensions 0.16±0.1 0 .06 1.0 min. RBE2EA20A 　 Data Sheet 10 100000 Ta=125°C Ta=125°C 10000 REVERSE CURRENT:IR(μA) Ta=75°C 1000 Ta=25°C 100 Ta=-25°C 10 Ta=-25°C FORWARD CURRENT:IF(A) 1 Ta=75°C 0.1 Ta=25°C 0.01 0 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 1 0 5 10 15 20 25 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 1000 f=1MHz FORWARD VOLTAGE:VF(mV) 375 Ta=25°C IF=1A n=30pcs 365 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 355 AVE:343.3mV 345 10 335 1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 325 VF DISPERSION MAP 300 Ta=25°C VR=20V n=30pcs 250 Ta=25°C f=1MHz VR=0V n=10pcs REVERSE CURRENT:IR(μA) 250 200 AVE:223.9μA CAPACITANCE BETWEEN TERMINALS:Ct(pF) 240 230 150 220 AVE:211pF 210 100 50 0 IR DISPERSION MAP 200 Ct DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.10 - Rev.A RBE2EA20A 　 Data Sheet 30 30 Ta=25°C IF=0.5A IR=1A Irr=0.25*IR n=10pcs 8.3ms 20 AVE:13.85A REVERSE RECOVERY TIME:trr(ns) IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc 25 20 15 AVE:9.2ns 10 10 5 0 IFSM DISRESION MAP 0 trr DISPERSION MAP 30 IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 20 8.3ms 30 25 PEAK SURGE FORWARD CURRENT:IFSM(A) 25 IFSM t 1cyc 20 15 15 10 10 5 5 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 10000 Mounted on epoxy board TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) 2 Rth(j-a) 100 Rth(j-c) FORWARD POWER DISSIPATION:Pf(W) 1000 1.5 1 D=1/2 Sin(θ＝180) 0.5 DC 10 1 0.001 0 0.01 0.1 1 10 100 1000 0 0.5 TIME:t(s) Rth-t CHARACTERISTICS 1 1.5 2 2.5 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 3 3.5 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.10 - Rev.A RBE2EA20A 　 Data Sheet 5 5 4.5 0A 0V 4 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 3.5 3 DC 2.5 2 1.5 1 0.5 Sin(θ＝180) 0 25 50 75 100 125 D=1/2 t T Io D=t/T VR=10V Tj=125°C VR 4 REVERSE POWER DISSIPATION:PR (W) 3 2 DC 1 Sin(θ＝180) D=1/2 0 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 0 AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE (Io-Ta) 5 Io 4.5 4 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 3.5 3 2.5 2 1.5 1 0.5 0 0 25 50 75 100 125 CASE TEMPERATURE:Tc(°C) DERATING CURVE (Io-Tc) Sin(θ＝180) D=1/2 DC 0A 0V t T 30 No break at 30kV ELECTROSTATIC DISCHARGE TEST ESD(KV) VR D=t/T VR=10V Tj=125°C 25 20 15 10 AVE:4.4kV 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A