RBLQ3LAM10TF
Schottky Barrier Diode
(AEC-Q101 qualified)
Data sheet
● Outline
VR
100
V
Io
3
A
IFSM
80
A
● Features
● Inner Circuit
High reliability
Small power mold type
Low V F and low IR
Low capacitance
● Application
● Packaging Specifications
Packing
Embossed Tape
Reel Size(mm)
180
Taping Width(mm)
12
Quantity(pcs)
3000
Taping Code
TR
Marking
3L
Switching power supply
Freewheel diode
Reverse polarity protection
● Structure
Trench MOS structure
● Absolute Maximum Ratings (Tc=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
V RM
Duty≦0.5
100
V
Reverse voltage
VR
Reverse direct voltage
100
V
Average rectified forward current
Io
Glass epoxy mounted、
60Hz half sin waveform、resistive load、
Tc=120℃ Max.
3
A
IFSM
60Hz half sin waveform、Non-repetitive、
one cycle、Ta=25℃
80
A
Tj
-
175
℃
Tstg
-
-55 ~ 175
℃
Peak forward surge current
Junction temperature(1)
Storage temperature
Note(1) To avoid occurrence of thermal runaway , actual board is to be designed to fulfill dPd/dTj
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