RBQ10B45A

Data Sheet Schottky Barrier Diode RBQ10B45A lApplications General rectification lDimensions (Unit : mm) 6.5±0.2 2.3±0.2 0.1 lLand size figure (Unit : mm) 6.0 0.5±0.1 C0.5 5.1±0.2 0.1 1.6 ① 0.8 min 0.75 0.65±0.1 2.5 9.5±0.5 1.6 3)High reliability 0.9 （1） （2） （3） CPD 2.3 2.3 lConstruction Silicon epitaxial planer 0.5±0.1 1.0±0.2 2.3±0.2 2.3±0.2 lStructure ROHM : CPD JEITA : SC-63 ① Manufacture Date lTaping specifications (Unit : mm) lAbsolute maximum ratings(Tc=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz・1cyc)(*2) Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg (*1)Business frequencies, Rating of R-load, 1/2 Io per diode. (*2)Per diode. lElectrical characteristics(Tj=25°C) Parameter Forward voltage Reverse current Limits 45 45 10 50 150 -40 to +150 Unit V V A A °C °C Symbol VF IR Min. - Typ. - Max. 0.65 0.15 Unit V mA Conditions IF=5A VR=45V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.11 - Rev.A 3.0 2.0 5.5±0. 3 lFeatures 1)Power mold type.(CPD) 2)Low IR 1.5±0.3 6.0 RBQ10B45A 　 Data Sheet 10 100000 Ta=150°C 10000 REVERSE CURRENT:IR(mA) FORWARD CURRENT:IF(A) Ta=125°C 1 Ta=150°C Ta=75°C 1000 Ta=125°C 100 Ta=75°C 10 0.1 Ta=25°C 1 Ta=25°C 0.1 Ta=-25°C Ta=-25°C 0.01 0 100 200 300 400 500 600 700 800 0.01 0 10 20 30 40 50 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS REVERSE VOLTAGE：VF(V) VR-IR CHARACTERISTICS 1000 f=1MHz 600 590 FORWARD VOLTAGE:VF(mV) 580 570 560 550 540 530 520 510 AVE:551.3mV Ta=25°C IF=5A n=30pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 10 1 0 5 10 15 20 25 30 500 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS VF DISPERSION MAP 30 Ta=25°C VR=45V n=30pcs 550 540 530 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 520 510 500 490 480 470 460 AVE:489.8pF Ta=25°C f=1MHz VR=0V n=10pcs 25 REVERSE CURRENT:IR(mA) 20 AVE:12.2mA 15 10 5 0 450 IR DISPERSION MAP Ct DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.11 - Rev.A RBQ10B45A 　 Data Sheet 300 30 Ta=25°C IF=0.5A IR=1A Irr=0.25*IR n=10pcs 250 PEAK SURGE FORWARD CURRENT:IFSM(A) IFSM 8.3ms 200 RESERSE RECOVERY TIME:trr(ns) 1cyc 25 20 150 AVE121A 15 AVE:10.8ns 100 10 50 5 0 0 Ifsm DISPERSION MAP trr DISPERSION MAP 300 300 IFSM 8.3ms 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) 250 PEAK SURGE FORWARD CURRENT:IFSM(A) 250 IFSM t 200 1cyc 200 150 150 100 100 50 50 0 1 10 NUMBER OF CYCLES Ifsm-CYCLE CHARACTERISTICS 100 0 1 10 TIME:t(ms) Ifsm-t CHARACTERISTICS 100 100 40 35 TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) 10 Rth(j-c) FORWARD POWER DISSIPATION:Pf(W) Rth(j-a) 30 25 D=1/2 20 Sin(q＝180) 15 10 5 1 DC 0.1 0.001 0 0.01 0.1 1 10 100 1000 0 5 10 15 20 25 30 35 TIME:t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.11 - Rev.A RBQ10B45A 　 Data Sheet 2 30 0A 0V t Io D=t/T VR=20V Tj=150°C VR 25 1.5 REVERSE POWER DISSIPATION:PR (W) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 20 T 1 DC D=1/2 0.5 Sin(q＝180) 15 D=1/2 10 DC 5 Sin(q＝180) 0 0 10 20 30 40 50 0 0 25 50 75 100 125 150 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE(Io-Ta) 30 0A 0V t 20 DC 15 D=1/2 10 T Io VR D=t/T VR=20V Tj=150°C 30 AVE:23.3kV 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 20 15 10 AVE:4.9kV 5 5 Sin(q＝180) 0 0 25 50 75 100 125 150 0 C=200pF R=0W C=100pF R=1.5kW CASE TEMPERATURE:Tc(°C) DERATING CURVE(Io-Tc) ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.11 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A