RBQ10BGE10A
Schottky Barrier Diode
Data sheet
● Outline
VR
100
V
Io
10
A
IFSM
100
A
● Features
● Inner Circuit
High reliability
Power mold type
Cathode common dual type
Low IR
● Application
● Packaging Specifications
Packing
Embossed Tape
Reel Size(mm)
330
Taping Width(mm)
16
Quantity(pcs)
2500
Taping Code
TL
Marking
BQ10BM100A
Switching power supply
● Structure
Silicon epitaxial planar
● Absolute Maximum Ratings (Tc=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
V RM
Duty≦0.5
100
V
Reverse voltage
VR
Reverse direct voltage
100
V
Average rectified forward current
Io
60Hz half sin waveform，resistive load，
Io/2 per diode，Tc=105℃Max.
10
A
IFSM
60Hz half sin waveform，
non-repetitive，per diode，Ta=25℃
100
A
Tj
-
150
℃
Tstg
-
-55 ～ 150
℃
Peak forward surge current
Junction temperature(1)
Storage temperature
Note(1) To avoid occurrence of thermal runaway ， actual board is to be designed to fulfill dPd/dTj
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免费人工找货- 国内价格 香港价格
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- 1000+3.427571000+0.44336
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- 1000+7.223521000+0.93437
- 国内价格
- 10+9.41515
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- 250+8.91633
- 1000+8.75596
- 国内价格
- 50+9.24749
- 100+9.08191
- 250+8.91633
- 1000+8.75596
- 国内价格 香港价格
- 1+5.510661+0.71281
- 50+4.4068750+0.57003
- 100+3.89232100+0.50348
- 300+3.55206300+0.45946
- 500+3.47736500+0.44980
- 1000+3.427571000+0.44336
- 4000+3.386074000+0.43799
- 国内价格
- 1+4.96800
- 200+4.14000
- 500+3.31200
- 1000+2.76000
