RBQ10BGE65A
Data sheet
Schottky Barrier Diode
● Outline
VR
65
V
Io
10
A
IFSM
50
A
● Features
● Inner Circuit
High reliability
Power mold type
Cathode common dual type
Low IR
● Application
● Packaging Specifications
Packing
Embossed Tape
Reel Size(mm)
330
Taping Width(mm)
16
Quantity(pcs)
2500
Taping Code
TL
Marking
BQ10BM65A
Switching power supply
● Structure
Silicon epitaxial planar
● Absolute Maximum Ratings (Tc=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
V RM
Duty≦0.5
65
V
Reverse voltage
VR
Reverse direct voltage
65
V
Average rectified forward current
Io
60Hz half sin waveform,resistive load,
Io/2 per diode,Tc=95℃Max.
10
A
IFSM
60Hz half sin waveform,
non-repetitive,per diode,Ta=25℃
50
A
Tj
-
150
℃
Tstg
-
-55 ~ 150
℃
Peak forward surge current
Junction temperature(1)
Storage temperature
Note(1) To avoid occurrence of thermal runaway , actual board is to be designed to fulfill dPd/dTj
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免费人工找货- 国内价格
- 5+4.38637
- 10+3.52492
- 50+3.09420
- 100+2.72500
- 200+2.61073
- 500+2.47008
- 1000+2.33823
- 国内价格
- 10+8.33420
- 630+8.12488
- 1250+7.92077
- 国内价格 香港价格
- 1+6.772781+0.81928
- 10+4.5854010+0.55468
- 50+3.2567750+0.39396
- 100+2.81119100+0.34006
- 500+2.51144500+0.30380
- 1000+2.454731000+0.29694
- 2000+2.406122000+0.29106
- 4000+2.373714000+0.28714