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RBQ10NS100AFHTL

RBQ10NS100AFHTL

  • 厂商:

    ROHM(罗姆)

  • 封装:

    TO263

  • 描述:

    LOW IR TYPE AUTOMOTIVE SCHOTTKY

  • 数据手册
  • 价格&库存
RBQ10NS100AFHTL 数据手册
RBQ10NS100AFH Schottky Barrier Diode (AEC-Q101 qualified) Data sheet                                                   ● Outline VR 100 V Io 10 A IFSM 100 A                           ● Features ● Inner Circuit High reliability Power mold type Cathode common dual type Low IR ● Application ● Packaging Specifications Packing Embossed Tape Reel Size(mm) 330 Taping Width(mm) 24 Quantity(pcs) 1000 Taping Code TL Marking BQ10NS100A Switching power supply ● Structure Silicon epitaxial planar ● Absolute Maximum Ratings (Tc=25ºC unless otherwise specified) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V RM Duty≦0.5 100 V Reverse voltage VR Reverse direct voltage 100 V Average rectified forward current Io 60Hz half sin waveform,resistive load, Io/2 per diode,Tc=105℃Max. 10 A IFSM 60Hz half sin waveform, non-repetitive,per diode,Ta=25℃ 100 A Tj - 150 ℃ Tstg - -55 ~ 150 ℃ Peak forward surge current Junction temperature(1) Storage temperature Note(1) To avoid occurrence of thermal runaway , actual board is to be designed to fulfill dPd/dTj
RBQ10NS100AFHTL 价格&库存

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RBQ10NS100AFHTL
    •  国内价格
    • 1+16.96533
    • 10+11.25162
    • 50+10.46049
    • 100+8.79033
    • 200+8.35960
    • 500+8.33323
    • 1000+7.53331

    库存:1000

    RBQ10NS100AFHTL
      •  国内价格 香港价格
      • 1+16.381041+1.98156
      • 10+12.2898310+1.48666
      • 50+8.1905250+0.99078
      • 100+6.55404100+0.79282
      • 500+6.14087500+0.74284
      • 1000+5.897821000+0.71344
      • 2000+5.816812000+0.70364
      • 4000+5.776304000+0.69874

      库存:1000