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RBQ10NS100AFHTL

RBQ10NS100AFHTL

  • 厂商:

    ROHM(罗姆)

  • 封装:

    TO263

  • 描述:

    LOW IR TYPE AUTOMOTIVE SCHOTTKY

  • 数据手册
  • 价格&库存
RBQ10NS100AFHTL 数据手册
RBQ10NS100AFH Schottky Barrier Diode (AEC-Q101 qualified) Data sheet                                                   ● Outline VR 100 V Io 10 A IFSM 100 A                           ● Features ● Inner Circuit High reliability Power mold type Cathode common dual type Low IR ● Application ● Packaging Specifications Packing Embossed Tape Reel Size(mm) 330 Taping Width(mm) 24 Quantity(pcs) 1000 Taping Code TL Marking BQ10NS100A Switching power supply ● Structure Silicon epitaxial planar ● Absolute Maximum Ratings (Tc=25ºC unless otherwise specified) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V RM Duty≦0.5 100 V Reverse voltage VR Reverse direct voltage 100 V Average rectified forward current Io 60Hz half sin waveform,resistive load, Io/2 per diode,Tc=105℃Max. 10 A IFSM 60Hz half sin waveform, non-repetitive,per diode,Ta=25℃ 100 A Tj - 150 ℃ Tstg - -55 ~ 150 ℃ Peak forward surge current Junction temperature(1) Storage temperature Note(1) To avoid occurrence of thermal runaway , actual board is to be designed to fulfill dPd/dTj
RBQ10NS100AFHTL 价格&库存

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RBQ10NS100AFHTL
    •  国内价格 香港价格
    • 1+16.369561+1.98156
    • 10+12.2812210+1.48666
    • 50+8.1847850+0.99078
    • 100+6.54945100+0.79282
    • 500+6.13656500+0.74284
    • 1000+5.893691000+0.71344
    • 2000+5.812742000+0.70364
    • 4000+5.772264000+0.69874

    库存:1000