Data Sheet
Schottky Barrier Diode
RBQ10NS45A
lApplications General rectification lDimensions(Unit : mm) lLand size figure (Unit : mm)
lFeatures 1)Cathode Common Dual type.(LPDS) 2)Low IR.
BQ10NS 45A
①
lConstruction Silicon epitaxial planer
ROHM : LPDS JEITA : TO263S ① Manufacture Year, Week and Day
lStructure
①②
③
lTaping dimensions (Unit : mm)
lAbsolute maximum ratings(Tc=25°C) Parameter Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current (*1)
Forward current surge peak (60Hz・1cyc) (*2)
Junction temperature Storage temperature
Symbol VRM VR Io IFSM Tj Tstg
Limits 45 45 10 50 150 -40 to +150
Unit V V A A °C °C
(*1) 60Hz half sin wave, 1/2 Io per diode. (*2) 60Hz half sin wave, one cycle, non-repetitive at Tj=25 °C. lElectrical characteristics(Tj=25°C) Parameter Forward voltage Reverse current
Symbol VF IR
Min. -
Typ. -
Max. 0.65 0.15
Unit V mA IF=5A VR=45V
Conditions
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1/4
2011.11 - Rev.A
RBQ10NS45A
Data Sheet
10 Ta=125°C Ta=150°C 1 Ta=75°C
100000 Ta=150°C
10000 REVERSE CURRENT:IR(mA)
FORWARD CURRENT:IF(A)
1000 Ta=125°C 100 Ta=75°C
10
0.1
Ta=25°C
1 Ta=25°C 0.1 Ta=-25°C
Ta=-25°C 0.01 0 100 200 300 400 500 600 700 800 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS
0.01 0 10 20 30 40 50 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS
1000 CAPACITANCE BETWEEN TERMINALS:Ct(pF)
600
f=1MHz
FORWARD VOLTAGE:VF(mV)
590 580 570 560 550 540 530 520 510 AVE:551.5mV
Ta=25°C IF=5A n=30pcs
100
10
1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS
500 VF DISPERSION MAP
30 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25°C VR=45V n=30pcs
550 540 530 520 510 500 490 480 470 460 450 IR DISPERSION MAP Ct DISPERSION MAP AVE:489.8pF Ta=25°C f=1MHz VR=0V n=10pcs
25 REVERSE CURRENT:IR(mA)
20
15
10
AVE:12.2mA
5
0
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2/4
2011.11 - Rev.A
RBQ10NS45A
Data Sheet
300
30 Ta=25°C IF=0.5A IR=1A Irr=0.25*IR n=10pcs
8.3ms 200
REVERSE RECOVERY TIME:trr(ns)
IFSM PEAK SURGE FORWARD CURRENT:IFSM(A)
1cyc
25
20
AVE:127.5A
15 AVE:10.8ns 10
100
5
0 IFSM DISRESION MAP
0 trr DISPERSION MAP
300
300
250 PEAK SURGE FORWARD CURRENT:IFSM(A)
IFSM 8.3ms 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A)
250
IFSM t
200
1cyc
200
150
150
100
100
50
50
0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100
0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100
1000
10
THERMAL IMPEDANCE:Rth (°C/W)
100 FORWARD POWER DISSIPATION:Pf(W)
8
TRANSIENT
10
Rth(j-a)
6
D=1/2 Sin(q=180)
1
Rth(j-c)
4
DC 0.1 2
0.01 0.001
0 0.01 0.1 1 10 100 1000 0 5 10 15 20 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS
TIME:t(s) Rth-t CHARACTERISTICS
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3/4
2011.11 - Rev.A
RBQ10NS45A
Data Sheet
2
30 0A 25 0V DC 20 D=1/2 15 t T Io VR D=t/T VR=20V Tj=150°C
1.5 REVERSE POWER DISSIPATION:PR (W)
1 DC D=1/2
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
10
0.5
Sin(q=180)
5
Sin(q=180)
0 0 10 20 30 40 50
0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE(Io-Ta)
REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS
30 Io 25 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0A 0V t 20 DC T
30 AVE:23.3kV VR D=t/T VR=20V Tj=150°C ELECTROSTATIC DISCHARGE TEST ESD(KV) 25
20
15 D=1/2 10
15
10 AVE:4.9kV 5
5
Sin(q=180)
0 0 25 50 75 100 125 150 CASE TEMPERATURE:Tc(°C) DERATING CURVE(Io-Tc)
0 C=200pF R=0W C=100pF R=1.5kW
ESD DISPERSION MAP
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4/4
2011.11 - Rev.A
Notice
Notes
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R1120A
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