RBQ10NS45A
Schottky Barrier Diode
Data sheet
● Outline
VR
45
V
Io
10
A
IFSM
50
A
● Features
● Inner Circuit
High reliability
Power mold type
Cathode common dual type
Low IR
● Application
● Packaging Specifications
Packing
Embossed Tape
Reel Size(mm)
330
Taping Width(mm)
24
Quantity(pcs)
1000
Taping Code
TL
Marking
BQ10NS45A
Switching power supply
● Structure
Silicon epitaxial planar
● Absolute Maximum Ratings (Tc=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
V RM
Duty≦0.5
45
V
Reverse voltage
VR
Reverse direct voltage
45
V
Average rectified forward current
Io
60Hz half sin waveform，resistive load，
Io/2 per diode，Tc=130℃Max.
10
A
IFSM
60Hz half sin waveform，
non-repetitive，per diode，Ta=25℃
50
A
Tj
-
150
℃
Tstg
-
-55 ～ 150
℃
Peak forward surge current
Junction temperature(1)
Storage temperature
Note(1) To avoid occurrence of thermal runaway ， actual board is to be designed to fulfill dPd/dTj
