RBQ10NS45A
Schottky Barrier Diode
Data sheet
● Outline
VR
45
V
Io
10
A
IFSM
50
A
● Features
● Inner Circuit
High reliability
Power mold type
Cathode common dual type
Low IR
● Application
● Packaging Specifications
Packing
Embossed Tape
Reel Size(mm)
330
Taping Width(mm)
24
Quantity(pcs)
1000
Taping Code
TL
Marking
BQ10NS45A
Switching power supply
● Structure
Silicon epitaxial planar
● Absolute Maximum Ratings (Tc=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
V RM
Duty≦0.5
45
V
Reverse voltage
VR
Reverse direct voltage
45
V
Average rectified forward current
Io
60Hz half sin waveform,resistive load,
Io/2 per diode,Tc=130℃Max.
10
A
IFSM
60Hz half sin waveform,
non-repetitive,per diode,Ta=25℃
50
A
Tj
-
150
℃
Tstg
-
-55 ~ 150
℃
Peak forward surge current
Junction temperature(1)
Storage temperature
Note(1) To avoid occurrence of thermal runaway , actual board is to be designed to fulfill dPd/dTj
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免费人工找货- 国内价格
- 50+6.68065
- 100+6.37299
- 250+6.08291
- 1000+5.09839
- 国内价格
- 10+6.01191
- 250+5.83175
- 500+5.65784
- 国内价格 香港价格
- 1+7.185951+0.86926
- 10+5.8735210+0.71050
- 50+3.3620950+0.40670
- 100+3.19196100+0.38612
- 500+2.97322500+0.35966
- 1000+2.876001000+0.34790
- 2000+2.673472000+0.32340
- 4000+2.641064000+0.31948
- 国内价格 香港价格
- 1+7.185951+0.86926
- 10+5.8735210+0.71050
- 50+3.3620950+0.40670
- 100+3.19196100+0.38612
- 500+2.97322500+0.35966
- 1000+2.876001000+0.34790
- 2000+2.673472000+0.32340
- 4000+2.641064000+0.31948