RBQ10NS65A

Data Sheet Schottky Barrier Diode RBQ10NS65A lApplications General rectification lDimensions(Unit : mm) lLand size figure (Unit : mm) lGeneral rectification 1)Cathode Common Dual type.（LPDS） 2)Low IR. BQ10NS 65A ① lConstruction Silicon epitaxial planer ROHM : LPDS JEITA : TO263S ① Manufacture Year, Week and Day lStructure ① lTaping dimensions（Unit : mm） ②③ ●Absolute maximum ratings(Tc=25°C) Parameter Limits Symbol VRM Reverse voltage (repetitive) 65 VR Reverse voltage (DC) 65 Average rectified forward current (*1) 10 Io IFSM Forward current surge peak (60Hz・1cyc)(*2) 50 Junction temperature 150 Tj Storage temperature -40 to +150 Tstg (*1) 60Hz half sin wave, 1/2 Io per diode. (*2) 60Hz half sin wave, one cycle, non-repetitive at Tj=25 °C. lElectrical characteristics(Tj=25°C) Parameter Forward voltage Reverse current Unit V V A A °C °C Symbol VF IR Min. - Typ. - Max. 0.69 0.15 Unit V mA IF=5A VR=65V Conditions www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.11 - Rev.A RBQ10NS65A 　 Data Sheet 10 100000 Ta=150°C 10000 REVERSE CURRENT:IR(mA) FORWARD CURRENT:IF(A) Ta=125°C 1 Ta=150°C 1000 Ta=125°C 100 Ta=75°C Ta=75°C 10 0.1 Ta=25°C 1 Ta=25°C Ta=-25°C 0.01 0 100 200 300 400 500 600 700 800 0.1 Ta=-25°C 0.01 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 1000 CAPACITANCE BETWEEN TERMINALS:Ct(pF) f=1MHz FORWARD VOLTAGE:VF(mV) 700 690 680 670 660 650 AVE:629.2mV 640 630 620 610 Ta=25°C IF=5A n=30pcs 100 10 1 0 5 10 15 20 25 30 600 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS VF DISPERSION MAP 50 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25°C VR=65V n=30pcs 450 440 430 420 410 400 390 380 370 360 350 Ct DISPERSION MAP IR DISPERSION MAP AVE:396pF Ta=25°C f=1MHz VR=0V n=10pcs 40 REVERSE CURRENT:IR(mA) 30 20 AVE:12.36mA 10 0 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.11 - Rev.A RBQ10NS65A 　 Data Sheet 300 30 Ta=25°C IF=0.5A IR=1A Irr=0.25*IR n=10pcs 8.3ms 200 AVE:129.0A 150 REVERSE RECOVERY TIME:trr(ns) 250 PEAK SURGE FORWARD CURRENT:IFSM(A) IFSM 1cyc 25 20 15 AVE:7.5ns 100 10 50 5 0 0 trr DISPERSION MAP IFSM DISRESION MAP 300 300 250 PEAK SURGE FORWARD CURRENT:IFSM(A) IFSM 8.3ms 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) 250 IFSM t 200 1cyc 200 150 150 100 100 50 50 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 1000 15 TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) 100 Rth(j-a) FORWARD POWER DISSIPATION:Pf(W) 10 10 D=1/2 1 Rth(j-c) 0.1 Sin(q＝180) 5 DC 0.01 0.001 0.001 0 0.01 0.1 1 10 100 1000 0 5 10 15 20 TIME:t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.11 - Rev.A RBQ10NS65A 　 Data Sheet 2 30 0A 25 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0V DC 20 D=1/2 15 t T VR D=t/T VR=30V Tj=150°C Io 1.5 REVERSE POWER DISSIPATION:PR (W) 1 DC D=1/2 0.5 Sin(q＝180) 10 5 Sin(q＝180) 0 0 10 20 30 40 50 60 70 0 0 25 50 75 100 125 150 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE(Io-Ta) 30 Io 25 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0A 0V t DC 15 D=1/2 10 T 30 25 D=t/T VR=30V Tj=150°C ELECTROSTATIC DISCHARGE TEST ESD(KV) VR 20 20 15 AVE:12.6kV 10 5 Sin(q＝180) 5 AVE:2.9kV 0 0 25 50 75 100 125 150 0 C=200pF R=0W C=100pF R=1.5kW CASE TEMPERATURE:Tc(°C) DERATING CURVE(Io-Tc) ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.11 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A