RBQ10RSM10B
Data sheet
Schottky Barrier Diode
● Outline
VR
100
V
Io
10
A
IFSM
200
A
● Features
● Inner Circuit
High reliability
Power mold type
Low IR
● Application
● Packaging Specifications
Packing
Embossed Tape
Reel Size(mm)
330
Taping Width(mm)
12
Quantity(pcs)
4000
Taping Code
TL1
Marking
BQ10RSM10B
General rectification
● Structure
Silicon epitaxial planar
● Absolute Maximum Ratings (Tc=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
V RM
Duty≦0.5
100
V
Reverse voltage
VR
Reverse direct voltage
100
V
Average rectified forward current
Io
60Hz half sin waveform,resistive load,
Io/2 per diode,Tc=115℃Max.
10
A
IFSM
60Hz half sin waveform,
non-repetitive,per diode,Ta=25℃
200
A
Tj
-
150
℃
Tstg
-
-55 ~ 150
℃
Peak forward surge current
Junction temperature(1)
Storage temperature
Note(1) To avoid occurrence of thermal runaway , actual board is to be designed to fulfill dPd/dTj
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免费人工找货- 国内价格
- 50+8.95383
- 100+7.04184
- 500+5.78177
- 2000+4.65707
- 国内价格
- 5+10.04311
- 50+8.95383
- 100+7.04184
- 500+5.78177
- 2000+4.65707
- 国内价格
- 5+6.67468
- 10+4.99508
- 50+4.25150
- 100+3.63915
- 200+3.44669
- 国内价格 香港价格
- 1+8.812141+1.07114
- 10+6.6111210+0.80360
- 50+4.4020450+0.53508
- 100+3.52325100+0.42826
- 500+3.30556500+0.40180
- 1000+3.168501000+0.38514
- 2000+3.128192000+0.38024
- 4000+3.104004000+0.37730