RBQ20BM100AFH
Schottky Barrier Diode
(AEC-Q101 qualified)
Data sheet
● Outline
VR
100
V
Io
20
A
IFSM
100
A
● Features
● Inner Circuit
High reliability
Power mold type
Cathode common dual type
Low IR
● Application
● Packaging Specifications
Packing
Embossed Tape
Reel Size(mm)
330
Taping Width(mm)
16
Quantity(pcs)
2500
Taping Code
TL
Marking
BQ20BM100A
Switching power supply
● Structure
Silicon epitaxial planar
● Absolute Maximum Ratings (Tc=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
V RM
Duty≦0.5
100
V
Reverse voltage
VR
Reverse direct voltage
100
V
Average rectified forward current
Io
60Hz half sin waveform,resistive load,
Io/2 per diode,Tc=105℃Max.
20
A
IFSM
60Hz half sin waveform,
non-repetitive,per diode,Ta=25℃
100
A
Tj
-
150
℃
Tstg
-
-55 ~ 150
℃
Peak forward surge current
Junction temperature(1)
Storage temperature
Note(1) To avoid occurrence of thermal runaway , actual board is to be designed to fulfill dPd/dTj
很抱歉,暂时无法提供与“RBQ20BM100AFHTL”相匹配的价格&库存,您可以联系我们找货
免费人工找货- 国内价格 香港价格
- 1+48.352891+5.84668
- 10+12.1328010+1.46706
- 50+7.8291850+0.94668
- 100+7.29427100+0.88200
- 500+6.92956500+0.83790
- 1000+6.864721000+0.83006
- 2000+6.807992000+0.82320
- 4000+6.783674000+0.82026
- 国内价格
- 1+13.01400
- 10+12.71160
- 30+12.50640
- 国内价格
- 1+19.78638
- 10+9.58540
- 50+8.79395
- 100+7.15828
- 200+6.70099
- 500+6.67461
- 1000+5.93592