RBQ20BM100AFH
Schottky Barrier Diode
(AEC-Q101 qualified)
Data sheet
● Outline
VR
100
V
Io
20
A
IFSM
100
A
● Features
● Inner Circuit
High reliability
Power mold type
Cathode common dual type
Low IR
● Application
● Packaging Specifications
Packing
Embossed Tape
Reel Size(mm)
330
Taping Width(mm)
16
Quantity(pcs)
2500
Taping Code
TL
Marking
BQ20BM100A
Switching power supply
● Structure
Silicon epitaxial planar
● Absolute Maximum Ratings (Tc=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
V RM
Duty≦0.5
100
V
Reverse voltage
VR
Reverse direct voltage
100
V
Average rectified forward current
Io
60Hz half sin waveform,resistive load,
Io/2 per diode,Tc=105℃Max.
20
A
IFSM
60Hz half sin waveform,
non-repetitive,per diode,Ta=25℃
100
A
Tj
-
150
℃
Tstg
-
-55 ~ 150
℃
Peak forward surge current
Junction temperature(1)
Storage temperature
Note(1) To avoid occurrence of thermal runaway , actual board is to be designed to fulfill dPd/dTj
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免费人工找货- 国内价格 香港价格
- 1+48.319691+5.84668
- 10+12.1244710+1.46706
- 50+7.8238150+0.94668
- 100+7.28926100+0.88200
- 500+6.92480500+0.83790
- 1000+6.860011000+0.83006
- 2000+6.803312000+0.82320
- 4000+6.779014000+0.82026
- 国内价格 香港价格
- 1+16.956001+2.04760
- 10+14.3554010+1.73360
- 100+12.51290100+1.51110
- 500+11.25340500+1.35900
- 1000+9.655801000+1.16610
- 2500+9.072702500+1.09570
- 5000+8.734505000+1.05480
- 10000+8.6529010000+1.04500
- 国内价格
- 1+13.01400
- 10+12.71160
- 30+12.50640
- 国内价格
- 1+19.94855
- 10+9.75458
- 50+8.87579
- 100+7.25003
- 200+6.78427
- 500+6.75790
- 1000+6.00214