Data Sheet
Schottky Barrier Diode
RBQ20NS65A
lApplications General rectification lDimensions (Unit : mm) lLand size figure (Unit : mm)
lFeatures 1)Cathode Common Dual type.(LPDS) 2)Low IR.
BQ20NS 65A
①
lConstruction Silicon epitaxial planer
lStructure
ROHM : LPDS JEITA : TO263S ① Manufacture Year, Week and Day
①② lTaping dimensions (Unit : mm)
③
lAbsolute maximum ratings (Tc=25C) Parameter Symbol VRM Reverse voltage (repetitive) Reverse voltage (DC) VR Average rectified forward current (*1) Io IFSM Forward current surge peak (60Hz・1cyc) (*2) Junction temperature Tj Storage temperature Tstg
Limits 65 65 20 100 150 -40 to +150
Unit V V A A °C °C
(*1) 60Hz half sin wave, 1/2 Io per diode. (*2) 60Hz half sin wave, one cycle, non-repetitive at Tj=25 °C. lElectrical characteristics (Tj=25°C) Parameter Forward voltage Reverse current Symbol VF IR Min. Typ. Max. 0.69 0.3 Unit V mA IF=10A VR=65V Conditions
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1/4
2011.11 - Rev.A
RBQ20NS65A
Data Sheet
100
100000 Ta=150°C 10000
FORWARD CURRENT:IF(A)
10
Ta=125°C Ta=150°C
REVERSE CURRENT:IR(mA)
1000 Ta=125°C 100 Ta=75°C
1
Ta=75°C
10
0.1
Ta=25°C
1
Ta=25°C
Ta=-25°C 0.01 0 100 200 300 400 500 600 700 800 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS
0.1 Ta=-25°C 0.01 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS
10000 CAPACITANCE BETWEEN TERMINALS:Ct(nF) f=1MHz FORWARD VOLTAGE:VF(mV)
650 640 630 620 610 600 590 580 570 560 AVE:610.4mV Ta=25°C IF=10A n=30pcs
1000
100
10
1 0 5 10 15 20 25 30
550 VF DISPERSION MAP
REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS
50 CAPACITANCE BETWEEN TERMINALS:Ct(nF) Ta=25°C VR=65V n=30pcs AVE:25.41mA 30
950 940 930 920 AVE:902pF 910 900 890 880 870 860 850 IR DISPERSION MAP Ct DISPERSION MAP Ta=25°C f=1MHz VR=0V n=10pcs
40 REVERSE CURRENT:IR(mA)
20
10
0
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2/4
2011.11 - Rev.A
RBQ20NS65A
Data Sheet
500 450 PEAK SURGE FORWARD CURRENT:IFSM(A) 400 350 300 250 200 150 100 50 0 IFSM DISRESION MAP AVE:233A 8.3ms REVERSE RECOVERY TIME:trr(ns) IFSM 1cyc
30 Ta=25°C IF=0.5A IR=1A Irr=0.25*IR n=10pcs
25
20
15
10
AVE:13.3ns
5
0 trr DISPERSION MAP
500 450 PEAK SURGE FORWARD CURRENT:IFSM(A) 400 8.3ms 350 300 250 200 150 100 50 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 1cyc 8.3ms IFSM PEAK SURGE FORWARD CURRENT:IFSM(A)
500 450 400 350 300 250 200 150 100 50 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 IFSM t
100
25
TRANSIENT THERMAL IMPEDANCE:Rth (°C/W)
10
Rth(j-a) FORWARD POWER DISSIPATION:Pf(W)
20
15
D=1/2
1
Rth(j-c)
Sin(q=180) 10
0.1 5
DC
0.01 0.001
0 0.01 0.1 1 10 100 1000 0 10 20 30 40 TIME:t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS
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3/4
2011.11 - Rev.A
RBQ20NS65A
Data Sheet
10
50 45 0A 0V t DC D=1/2 T Io VR D=t/T VR=30V Tj=150°C
8 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) DC 6 D=1/2 4 Sin(q=180) 2
40 35 30 25 20 15 10 5 Sin(q=180)
0 0 10 20 30 40 50 60 70
0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE(Io-Ta)
REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS
50 45 40 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 35 30 25 20 15 10 5 0 0 25 50 75 100 125 150 CASE TEMPERATURE:Tc(°C) DERATING CURVE(Io-Tc) Sin(q=180) D=1/2 DC T 0A 0V Io VR D=t/T VR=30V Tj=150°C
30
25 ELECTROSTATIC DISCHARGE TEST ESD(KV) AVE:18.6kV
20
15
10 AVE:5.8kV 5
0 C=200pF R=0W C=100pF R=1.5kW
ESD DISPERSION MAP
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4/4
2011.11 - Rev.A
Notice
Notes
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