RBQ20T65A

Data Sheet Schottky Barrier Diode RBQ20T65A lApplications General rectification 　　 lDimensions (Unit : mm) 4.5±0.3 　　　 0.1 10.0±0.3 　　　 0.1 2.8±0.2 　　　 0.1 lStructure ① 1 .2 lConstruction Silicon epitaxial planer 5.0±0.2 8.0±0.2 12.0±0.2 lFeatures 1)Cathode common type. 2)Low IR 3)High reliability 1.3 0.8 (1) (2) (3) 13.5MIN 15.0±0.4 　 0.2 8.0 0.7±0.1 0 .05 2.6±0.5 ROHM : TO220FN Manufacture Date ① lAbsolute maximum ratings (Tc=25C) Parameter Symbol VRM Reverse voltage (repetitive) Reverse voltage (DC) VR Average rectified forward current (*1) Io IFSM Forward current surge peak (60Hz・1cyc) Junction temperature Tj Storage temperature Tstg (*1) Rating of per diode : Io/2 Limits 65 65 20 100 150 -40 to +150 Unit V V A A °C °C lElectrical characteristics (Tj=25°C) Parameter Forward voltage Reverse current Symbol VF IR Min. Typ. Max. 0.69 300 Unit V mA IF=10A VR=65V Conditions www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.11 - Rev.A RBQ20T65A 　 Data Sheet 100 100000 Ta=150°C 10000 Ta=125°C Ta=150°C REVERSE CURRENT:IR(mA) FORWARD CURRENT:IF(A) 10 1000 Ta=125°C 100 Ta=75°C 1 Ta=75°C 10 0.1 Ta=25°C Ta=-25°C 1 Ta=25°C 0.1 Ta=-25°C 0.01 0 100 200 300 400 500 600 700 800 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0.01 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 10000 CAPACITANCE BETWEEN TERMINALS:Ct(pF) f=1MHz 650 640 FORWARD VOLTAGE:VF(mV) 630 620 610 600 590 580 570 560 AVE:610.4mV Ta=25°C IF=10A n=30pcs 1000 100 10 1 0 5 10 15 20 25 30 550 VF DISPERSION MAP REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 50 Ta=25°C VR=65V n=30pcs AVE:25.41mA 30 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 950 940 930 920 910 900 890 880 870 860 850 Ct DISPERSION MAP AVE:902pF Ta=25°C f=1MHz VR=0V n=10pcs 40 REVERSE CURRENT:IR(mA) 20 10 0 IR DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.11 - Rev.A RBQ20T65A 　 Data Sheet 500 450 PEAK SURGE FORWARD CURRENT:IFSM(A) 400 350 300 250 200 150 100 50 0 IFSM DISRESION MAP AVE:236A IFSM 1cyc 8.3ms REVERSE RECOVERY TIME:trr(ns) 30 Ta=25°C IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 15 10 AVE:13.3ns 5 0 trr DISPERSION MAP 500 450 IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 400 350 300 250 200 150 100 50 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 8.3ms 8.3ms 1cyc 500 450 400 350 300 250 200 150 100 50 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 IFSM t 100 25 TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) Rth(j-a) 10 FORWARD POWER DISSIPATION:Pf(W) 20 D=1/2 15 Sin(q＝180) 10 1 Rth(j-c) 0.1 5 DC 0.01 0.001 0 0.01 0.1 1 10 100 1000 0 10 20 30 40 TIME:t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.11 - Rev.A RBQ20T65A 　 Data Sheet 10 40 35 0A 0V AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 30 D=1/2 25 20 15 10 5 Sin(q＝180) DC t VR D=t/T VR=30V T Tj=150°C Io 8 REVERSE POWER DISSIPATION:PR (W) DC 6 D=1/2 4 Sin(q＝180) 2 0 0 10 20 30 40 50 60 70 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE(Io-Ta) REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 50 45 40 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 35 30 D=1/2 25 20 15 Sin(q＝180) 10 5 0 0 25 50 75 100 125 150 DC T Io 0A 0V t VR D=t/T VR=30V Tj=150°C 30 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) AVE:18.6kV 20 15 10 AVE:5.8kV 5 0 C=200pF R=0W ESD DISPERSION MAP C=100pF R=1.5kW CASE TEMPERATURE:Tc(°C) DERATING CURVE(Io-Tc) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.11 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A