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RBQ30NS100AFHTL

RBQ30NS100AFHTL

  • 厂商:

    ROHM(罗姆)

  • 封装:

    TO263

  • 描述:

    LOW IR TYPE AUTOMOTIVE SCHOTTKY

  • 数据手册
  • 价格&库存
RBQ30NS100AFHTL 数据手册
RBQ30NS100AFH Schottky Barrier Diode (AEC-Q101 qualified) Data sheet                                                   ● Outline VR 100 V Io 30 A IFSM 100 A                           ● Features ● Inner Circuit High reliability Power mold type Cathode common dual type Low IR ● Application ● Packaging Specifications Packing Embossed Tape Reel Size(mm) 330 Taping Width(mm) 24 Quantity(pcs) 1000 Taping Code TL Marking BQ30NS100A Switching power supply ● Structure Silicon epitaxial planar ● Absolute Maximum Ratings (Tc=25ºC unless otherwise specified) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V RM Duty≦0.5 100 V Reverse voltage VR Reverse direct voltage 100 V Average rectified forward current Io 60Hz half sin waveform,resistive load, Io/2 per diode,Tc=105℃Max. 30 A IFSM 60Hz half sin waveform, non-repetitive,per diode,Ta=25℃ 100 A Tj - 150 ℃ Tstg - -55 ~ 150 ℃ Peak forward surge current Junction temperature(1) Storage temperature Note(1) To avoid occurrence of thermal runaway , actual board is to be designed to fulfill dPd/dTj
RBQ30NS100AFHTL 价格&库存

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RBQ30NS100AFHTL

    库存:895

    RBQ30NS100AFHTL
      •  国内价格 香港价格
      • 1+17.446291+2.11190
      • 10+13.0827010+1.58368
      • 50+11.5283250+1.39552
      • 100+9.84441100+1.19168
      • 500+9.15627500+1.10838
      • 1000+8.848631000+1.07114
      • 2000+8.727202000+1.05644
      • 4000+8.597674000+1.04076

      库存:866

      RBQ30NS100AFHTL
      •  国内价格 香港价格
      • 1+24.955201+3.01487
      • 10+20.9820810+2.53487
      • 100+16.97389100+2.05064
      • 500+15.08813500+1.82282

      库存:1955