RBQ30NS100AFH
Schottky Barrier Diode
(AEC-Q101 qualified)
Data sheet
● Outline
VR
100
V
Io
30
A
IFSM
100
A
● Features
● Inner Circuit
High reliability
Power mold type
Cathode common dual type
Low IR
● Application
● Packaging Specifications
Packing
Embossed Tape
Reel Size(mm)
330
Taping Width(mm)
24
Quantity(pcs)
1000
Taping Code
TL
Marking
BQ30NS100A
Switching power supply
● Structure
Silicon epitaxial planar
● Absolute Maximum Ratings (Tc=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
V RM
Duty≦0.5
100
V
Reverse voltage
VR
Reverse direct voltage
100
V
Average rectified forward current
Io
60Hz half sin waveform,resistive load,
Io/2 per diode,Tc=105℃Max.
30
A
IFSM
60Hz half sin waveform,
non-repetitive,per diode,Ta=25℃
100
A
Tj
-
150
℃
Tstg
-
-55 ~ 150
℃
Peak forward surge current
Junction temperature(1)
Storage temperature
Note(1) To avoid occurrence of thermal runaway , actual board is to be designed to fulfill dPd/dTj
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免费人工找货- 国内价格 香港价格
- 1+17.458531+2.11190
- 10+13.0918710+1.58368
- 50+11.5364050+1.39552
- 100+9.85131100+1.19168
- 500+9.16269500+1.10838
- 1000+8.854841000+1.07114
- 2000+8.733322000+1.05644
- 4000+8.603694000+1.04076
- 国内价格 香港价格
- 1+24.946621+3.01172
- 10+20.9748710+2.53223
- 100+16.96806100+2.04850
- 500+15.08294500+1.82091
- 国内价格
- 1+23.11855
- 10+19.42662
- 50+16.26210
- 100+15.73468
- 200+15.64678
- 500+14.50404