RBQ30NS45A

Data Sheet Schottky Barrier Diode RBQ30NS45A lApplications General rectification lDimensions（Unit : mm） lLand size figure (Unit : mm) lFeatures 1)Cathode Common Dual type.(LPDS) 2)Low IR. BQ30NS 45A ① lConstruction Silicon epitaxial planer ROHM : LPDS JEITA : TO263S ① Manufacture Year, Week and Day lStructure ① ② ③ lTaping dimensions (Unit : mm) lAbsolute maximum ratings(Tc=25°C) Parameter Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak （60Hz・1cyc) (*2) Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 45 45 30 100 150 -40 to +150 Unit V V A A °C °C (*1) 60Hz half sin wave, 1/2 Io per diode. (*2) 60Hz half sin wave, one cycle, non-repetitive at Tj=25 °C. lElectrical characteristics（Tj=25°C) Parameter Forward voltage Reverse current Symbol VF IR Min. - Typ. - Max. 0.65 0.45 Unit V mA IF=15A VR=45V Conditions www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.11 - Rev.A RBQ30NS45A 　 Data Sheet 100 100000 Ta=150°C 10000 REVERSE CURRENT:IR(mA) FORWARD CURRENT:IF(A) 10 Ta=125°C Ta=150°C Ta=75°C Ta=25°C 1000 Ta=125°C 100 Ta=75°C 10 Ta=25°C 1 0.1 Ta=-25°C 1 0.1 Ta=-25°C 0.01 0 100 200 300 400 500 600 700 800 0.01 0 10 20 30 40 50 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 10000 CAPACITANCE BETWEEN TERMINALS:Ct(pF) f=1MHz 1000 FORWARD VOLTAGE:VF(mV) 600 590 580 570 560 550 540 530 520 510 AVE:564.4mV Ta=25°C IF=15A n=30pcs 100 10 1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 500 VF DISPERSION MAP 100 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 90 80 REVERSE CURRENT:IR(mA) 70 60 50 40 30 20 10 0 AVE:36.6mA Ta=25°C VR=45V n=30pcs 1600 1590 1580 AVE:1562.4pF 1570 1560 1550 1540 1530 1520 1510 1500 Ct DISPERSION MAP Ta=25°C f=1MHz VR=0V n=10pcs IR DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.11 - Rev.A RBQ30NS45A 　 Data Sheet 500 30 Ta=25°C IF=0.5A IR=1A Irr=0.25*IR n=10pcs PEAK SURGE FORWARD CURRENT:IFSM(A) 400 REVERSE RECOVERY TIME:trr(ns) IFSM 8.3ms AVE265A 1cyc 25 AVE:19.2ns 20 300 15 200 10 100 5 0 0 IFSM DISRESION MAP trr DISPERSION MAP 500 450 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 400 350 300 250 200 150 100 50 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 IFSM 500 450 400 350 300 250 200 150 100 50 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 IFSM t 8.3ms 8.3ms 1cyc 1000 35 30 TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) 100 25 Rth(j-a) 10 FORWARD POWER DISSIPATION:Pf(W) 20 15 10 DC 0.1 5 0.01 0.001 0 0.01 0.1 1 10 100 1000 0 10 20 30 40 50 D=1/2 1 Sin(q＝180) Rth(j-c) TIME:t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.11 - Rev.A RBQ30NS45A 　 Data Sheet 6 60 0A Io t 40 DC T D=t/T VR=20V Tj=150°C VR 5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 50 D=1/2 0V REVERSE POWER DISSIPATION:PR (W) 4 3 DC 2 Sin(q＝180) 1 D=1/2 30 20 Sin(q＝180) 10 0 0 10 20 30 40 50 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE(Io-Ta) 80 Io 70 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 60 DC 50 40 30 20 10 0 0 25 50 75 100 125 150 Sin(q=180) D=1/2 T 0A 0V VR D=t/T VR=20V Tj=150°C ELECTROSTATIC DISCHARGE TEST ESD(KV) 30 No break at 30kV 25 20 15 AVE:16.2kV 10 5 0 C=200pF R=0W C=100pF R=1.5kW CASE TEMPERATURE:Tc(°C) DERATING CURVE(Io-Tc) ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.11 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A