RBQ30NS45A
Schottky Barrier Diode
Data sheet
● Outline
VR
45
V
Io
30
A
IFSM
100
A
● Features
● Inner Circuit
High reliability
Power mold type
Cathode common dual type
Low IR
● Application
● Packaging Specifications
Packing
Embossed Tape
Reel Size(mm)
330
Taping Width(mm)
24
Quantity(pcs)
1000
Taping Code
TL
Marking
BQ30NS45A
Switching power supply
● Structure
Silicon epitaxial planar
● Absolute Maximum Ratings (Tc=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
V RM
Duty≦0.5
45
V
Reverse voltage
VR
Reverse direct voltage
45
V
Average rectified forward current
Io
60Hz half sin waveform,resistive load,
Io/2 per diode,Tc=100℃Max.
30
A
IFSM
60Hz half sin waveform,
non-repetitive,per diode,Ta=25℃
100
A
Tj
-
150
℃
Tstg
-
-55 ~ 150
℃
Peak forward surge current
Junction temperature(1)
Storage temperature
Note(1) To avoid occurrence of thermal runaway , actual board is to be designed to fulfill dPd/dTj
很抱歉,暂时无法提供与“RBQ30NS45ATL”相匹配的价格&库存,您可以联系我们找货
免费人工找货- 国内价格
- 5+8.49087
- 10+6.35497
- 50+5.40568
- 100+4.63219
- 200+4.39486
- 500+4.10480
- 国内价格 香港价格
- 1+2.673281+0.32340
- 10+2.6003810+0.31458
- 50+2.5517750+0.30870
- 100+2.50317100+0.30282
- 500+2.48696500+0.30086
- 1000+2.486961000+0.30086
- 2000+2.478862000+0.29988
- 4000+2.478864000+0.29988
- 国内价格 香港价格
- 1+2.673281+0.32340
- 10+2.6003810+0.31458
- 50+2.5517750+0.30870
- 100+2.50317100+0.30282
- 500+2.48696500+0.30086
- 1000+2.486961000+0.30086
- 2000+2.478862000+0.29988
- 4000+2.478864000+0.29988